There are various circuits for extracting threshold voltage $\left(V_{th}\right)$ of CMOS transistors. In this work, we have introduced an energy-efficient threshold voltage extractor with high precision and extended long-term variations. Considering fabrication prohibits, a switched capacitor (SC) has been used instead of a high resistive poly resistor. In order to reduce the power consumption of the $V_{th}$ extractor, the circuit operates in the burst-mode (energy-efficient). Also, to reduce the glitches in the structure of the SC, a 3rd-order low-pass filter and a replica branch are used. Furthermore, the flipped voltage follower (FVF) structure extends threshold voltage variations over time to measure $V_{th}$ aging via reasonable resolution data converters. The circuit has been evaluated using $65nm$ standard CMOS model. The range of $V_{\text{th}}$ variations over 180 months is between $239.4mV$ and $278.9mV$, which is equivalent to a 16.5% change. The power consumption of the entire circuit is less than 11 $nW$. This circuit is a good candidate to function as a benchmark for the efficiency of high-reliability circuits and aging sensors.

有多种用于提取阈值电压的电路 $（V_{ŤH}）$CMOS晶体管。在这项工作中，我们推出了一种具有高精度和扩展的长期变化的节能阈值电压提取器。考虑到制造禁止，已使用开关电容器（SC）代替高电阻多晶硅电阻器。为了减少功耗$V_{ŤH}$提取器，电路工作在突发模式（节能）。另外，为了减少SC的结构中的毛刺，使用了三阶低通滤波器和副本分支。此外，翻转电压跟随器（FVF）结构可扩展阈值电压随时间变化以进行测量$V_{ŤH}$通过合理分辨率的数据转换器进行老化。该电路已通过评估$\mathrm{65岁}ñ米$标准CMOS型号。范围$V_{\text{日}}$ 180个月之间的变化介于 $239.4米V$ 和 $278.9米V$，相当于变化16.5％。整个电路的功耗小于11$ñ\mathrm{w\; ^}$。该电路非常适合用作高可靠性电路和老化传感器效率的基准。