Abstract In this study, a high performance TiO 2 / Al 2 O 3 / MgF 2 multilayer anti-reflective (AR) coating, with an average reflectivity of 6.36% in spectral range of 300–1800 nm, applied on GaInP/GaAs/Ge triple-junction solar cell was designed by Essential Macleod Program (EMP) software. Based on the simulation results, TiO 2 , Al 2 O 3 , MgF 2 single layer and TiO 2 / Al 2 O 3 / MgF 2 multilayer AR coating samples were grown by Electron Beam Evaporation (EBE) system for 1 MeV electron beam irradiation experiment. The overall reflectivity of TiO 2 / Al 2 O 3 / MgF 2 multilayer AR coating is decreased with the increase of electron irradiation fluence due to the change of reflectivity of each AR layer caused by the refractive index changes. This result indicates that the TiO 2 / Al 2 O 3 / MgF 2 multilayer AR coating can improve the triple junction solar cell radiation resistance by achieving favorable permeability in the broadband solar spectrum, especially in 750–900 nm region where the main degradation spectral window for triple junction solar cell.

中文翻译：

---

1 MeV电子辐照对GaInP/InGaAs/Ge三结太阳能电池TiO2/Al2O3/MgF2抗反射涂层的影响

摘要 在本研究中，一种高性能的 TiO 2 / Al 2 O 3 / MgF 2 多层增透膜，在 300-1800 nm 的光谱范围内具有 6.36% 的平均反射率，应用于 GaInP/GaAs/Ge三结太阳能电池由 Essential Macleod Program (EMP) 软件设计。根据模拟结果，通过电子束蒸发 (EBE) 系统生长 TiO 2 、Al 2 O 3 、MgF 2 单层和 TiO 2 / Al 2 O 3 / MgF 2 多层增透膜样品进行 1 MeV 电子束辐照实验. TiO 2 / Al 2 O 3 / MgF 2 多层增透膜的整体反射率随着电子辐照通量的增加而降低，这是由于折射率变化引起各增透层反射率的变化。