A wide bandgap oxide/transition metal multilayered structure, consisting of four submicron-thick Ga-doped ZnO layers and three ultrathin Co metal layers, is studied to highlight the induction of room temperature ferromagnetism (RTFM), a fundamental outcome of investigations dealing with dilute magnetic semiconductors and multiferroic materials. A comprehensive study including the structural, optical and magnetic properties of both as-deposited and high-temperature annealed samples is described. Optical transmittance spectroscopy and x-ray diffraction measurements confirm the conversion of the layered structure into a solid-state solution of Co within the Ga-doped ZnO after annealing. The study discloses RTFM in the as-deposited state due to nonoxidized metal components within the multilayer structure.

中文翻译：

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基于Ga掺杂的ZnO和Co的稀磁半导体的结构，光学和磁性

研究了宽带隙氧化物/过渡金属多层结构，该结构由四个亚微米厚的Ga掺杂的ZnO层和三个超薄的Co金属层组成，以强调室温铁磁（RTFM）的感应，这是研究稀释的基本结果磁性半导体和多铁性材料。描述了包括沉积和高温退火样品的结构，光学和磁性的综合研究。光学透射光谱和X射线衍射测量证实了退火后，层状结构在掺杂Ga的ZnO内转化为Co的固态溶液。该研究揭示了由于多层结构中未氧化的金属成分，RTFM处于沉积状态。