Results for a room temperature contacting method applied to the p-type rear surface of monocrystalline and multicrystalline solar cell structures are presented. Monocrystalline silicon devices with the rear contacts prepared using the point contacting by localized dielectric breakdown method are reported with an efficiency of 19.2%. The devices show improved measurements of key performance metrics of ρ_c of 1.6 ± 0.8 mΩcm² and J_0c of 2100 ± 650 fAcm⁻². This contacting approach is also demonstrated for multicrystalline silicon cells, with no evidence of parasitic breakdown at grain boundary sites. The multicrystalline device implementation highlights a key advantage of this contacting method, namely a relatively free choice of annealing temperature. This flexibility allows process optimization such that the activation of light-and-elevated-temperature-induced degradation is prevented in hydrogenated multicrystalline silicon, while still maximizing the benefits to bulk lifetime.

中文翻译：

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用于多晶硅电池的氢化和吸气兼容 p 型触点，无光，高温引起的降解

应用于室温接触方法的结果 磷介绍了单晶和多晶太阳能电池结构的-型背面。据报道，采用局部介电击穿法制备具有后触点的单晶硅器件的效率为 19.2%。这些设备显示了对关键性能指标的改进测量ρ _c1.6 ± 0.8 mΩcm ²和J_0C2100 ± 650 fAcm ^-2。这种接触方法也适用于多晶硅电池，在晶界位置没有寄生击穿的证据。多晶器件实现突出了这种接触方法的一个关键优势，即相对自由的退火温度选择。这种灵活性允许工艺优化，从而在氢化多晶硅中防止光和高温引起的退化的激活，同时仍然最大限度地提高体寿命。