Metal-catalyzed chemical etching (MCCE) is an effective method for making texture surface on diamond wire saw (DWS) cut mc-Si wafer. In this work, microstructures with different depth-to-width ratios were obtained by MCCE on the surface of DWS cut mc-Si wafers. Simultaneously, the influence of etching time and the concentration of AgNO3 on etching depth, surface reflectance performance, and effect of reaming on the solar cell performance were studied. In total, 12 microstructures with different depth-to-width ratios ranging from 0.63 to 5.31 were prepared. The etching rate increased with the increase in concentration of AgNO3 and etching time. Moreover, the depth-to-width ratio significantly affected the reflectivity of silicon wafers. The relationship between them can be expressed by the fitting exponential function: y = 12.41 × x-0.733. The reflectivity obtained in the experiment ranged from 3.71% to 18.15%. After reaming, the performance of the mc-Si solar cells has been significantly improved, and η could reach up to 18.53%.

中文翻译：

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不同深宽比微结构对表面反射率和硅太阳能电池性能的影响


金属催化化学蚀刻（MCCE）是在金刚石线锯（DWS）切割的多晶硅晶圆上制造纹理表面的有效方法。在这项工作中，通过 MCCE 在 DWS 切割的多晶硅晶圆表面获得了不同深宽比的微结构。同时研究了刻蚀时间和AgNO3浓度对刻蚀深度、表面反射性能的影响以及铰孔对太阳能电池性能的影响。总共制备了 12 个不同深宽比范围为 0.63 至 5.31 的微结构。刻蚀速率随着AgNO3浓度和刻蚀时间的增加而增加。此外，深宽比显着影响硅片的反射率。它们之间的关系可以用拟合指数函数来表示：y=12.41×x-0.733。实验获得的反射率范围为3.71%~18.15%。扩孔后，多晶硅太阳能电池的性能得到显着提升，η可达18.53%。