Reliable characterization techniques to accurately quantify the metallization-induced recombination losses as well as contact resistivity losses of screen-printed cells are crucial for successful optimization of the contact grid design. Previously, the dark saturation current density at the contact (${J}_{\rm 0c}$) is often assumed to be constant for different finger width. Similarly, impact of finger width on contact resistivity (${\rho }_{\rm c}$) is rarely reported. Therefore, we performed a comprehensive evaluation of ${J}_{\rm 0c}$ and ${\rho }_{\rm c}$ as a function of finger width, spacing as well as firing temperature. We found out that ${J}_{\rm 0c}$ increases from $\approx$2000 to $\approx$8100 $\text{fA/cm}^{2}$, when the finger width increases from 60 to 400 $\mu$m; and ${\rho }_{\rm c}$ decrease from 7.2 to 2.2 $\text{m}{\Omega }\cdot \text{cm}^{2}$ when using a wide-TLM rather than a narrow-TLM structure, for samples fired at 840 $^{\circ }$C. Based on our cross-sectional and top-down scanning electron microscopy images, we believe that the physical root cause can be explained by the difference in the microstructure formed at the metal–silicon interface during the firing process for the screen-printed contacts.

中文翻译：

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工业硅太阳能电池接触复合和接触电阻率损失的综合评价

准确量化金属化引起的复合损失以及丝网印刷电池的接触电阻率损失的可靠表征技术对于接触网格设计的成功优化至关重要。以前，接触处的暗饱和电流密度 (${J}_{\rm 0c}$) 对于不同的手指宽度，通常假设为常数。同样，手指宽度对接触电阻率的影响（${\rho }_{\rm c}$) 很少报道。因此，我们进行了综合评估 ${J}_{\rm 0c}$ 和 ${\rho }_{\rm c}$作为手指宽度、间距和烧制温度的函数。我们发现${J}_{\rm 0c}$ 从增加 $\大约$2000 至 $\大约$8100 $\text{fA/cm}^{2}$, 当手指宽度从 60 增加到 400 $\mu$米；和${\rho }_{\rm c}$ 从 7.2 减少到 2.2 $\text{m}{\Omega }\cdot \text{cm}^{2}$ 当使用一个 宽的-TLM 而不是 狭窄的-TLM 结构，用于在 840 下烧制的样品 $^{\circ }$C. 根据我们的横截面和自上而下的扫描电子显微镜图像，我们认为物理根本原因可以通过丝网印刷触点烧制过程中金属-硅界面处形成的微观结构的差异来解释.