Herein, we present a pulsed-laser processing method for crystallization and dopant activation of a highly n-doped amorphous silicon (a-Si:H) carrier-selective layer in a tunnel oxide passivated contact (TOPCon) Si solar cell structure. The laser method provides enhanced conductivity and implied open circuit voltage while reducing emitter saturation current density and surface heating, as opposed to conventional high-temperature furnace annealing of the bulk Si wafer with a TOPCon structure. We identify an appropriate laser wavelength, fluence, and layer thickness using modeling and simulations. Raman and Hall effect measurements demonstrate increased crystallinity and dopant activation, whereas photoconductive decay shows enhanced surface and interface passivation quality. Additionally, we examine the role of subsequent SiNx deposition on further improving the passivation of laser-processed TOPCon layers to achieve a 5.9 kΩ/sq film sheet resistance, 2 ms effective carrier lifetime, 718 mV implied open-circuit voltage (iVOC), and 8.6 fA/cm2 one-side recombination current density (J0) with the potential for further passivation improvement via laser process and a-Si layer thickness optimization.

中文翻译：

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TOPCon Si 太阳能电池中 a-Si:H 载流子选择层的激光结晶和掺杂活化

在此，我们提出了一种脉冲激光加工方法，用于在隧道氧化物钝化接触 (TOPCon) Si 太阳能电池结构中结晶和掺杂剂激活高度 n 掺杂的非晶硅 (a-Si:H) 载流子选择层。与具有 TOPCon 结构的体硅晶片的传统高温炉退火相反，激光方法提供增强的导电性和隐含的开路电压，同时降低发射极饱和电流密度和表面加热。我们使用建模和模拟来确定合适的激光波长、能量密度和层厚度。拉曼和霍尔效应测量表明结晶度和掺杂剂活化增加，而光电导衰减显示表面和界面钝化质量增强。此外，