This paper presents the results of the dose dependencies of the light sum accumulation in ZnSe single crystals at a different X-ray excitation at 85 K. The values of light sum accumulation at different deep traps were determined from the thermally stimulated luminescence and conductivity curves. It was confirmed that the accumulated light sum is uniquely determined by the dose of radiation only, that is, the product of the intensity of excitation by the time of X-ray exposure. The same result is also given by the theoretical consideration of the kinetics of the light sum accumulation on deep traps for a multicenter model of crystal phosphors.

中文翻译：

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X 射线激发下 ZnSe 晶体中的光和积累

本文介绍了在 85 K 的不同 X 射线激发下 ZnSe 单晶中光和积累的剂量依赖性的结果。从热刺激发光和电导率曲线确定不同深陷阱的光和积累值。已证实累积光和仅由辐射剂量唯一确定，即激发强度与 X 射线曝光时间的乘积。对于晶体磷光体的多中心模型，对深陷阱上的光和积累动力学的理论考虑也给出了相同的结果。