Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors,Advanced Engineering Materials

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Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors
Advanced Engineering Materials ( IF 3.4 ) Pub Date : 2020-08-21 , DOI: 10.1002/adem.202070032
Hyeonggyu Kim ₁ , Jiseok Seo ₁ , Narkhyeon Seong ₁ , Seunghwan Lee ₁ , Sooyeon Lee ₁ , Taehoon Kim ₁ , Yongtaek Hong ₁

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A newly‐designed multi‐dipping technique of semiconducting single‐walled carbon nanotubes (SWCNTs) enables easy implementation of flexible/stretchable solution‐processed SWCNT thin‐film transistors (TFTs) in a very short time. Using commercialized aqueous SWCNT ink, repetition of deionized (DI) water rinsing during multi‐dipping process makes possible the rapid deposition of a dense and high quality SWCNT network formation, thus leading to significant reduction in total fabrication time but improved electrical performances for SWCNT TFTs. The image shows deposition mechanisms for conventional one‐time dipping (left) and multi‐dipping techniques (right). Further details can be found in the article number 1901413 by Taehoon Kim, Yongtaek Hong and co‐workers.

中文翻译：

多浸技术可缩短固溶处理的单壁碳纳米管薄膜晶体管的制造时间并提高其性能

半导体单壁碳纳米管（SWCNT）的最新设计的多浸渍技术可以在很短的时间内轻松实现柔性/可拉伸溶液加工的SWCNT薄膜晶体管（TFT）。使用商品化的SWCNT水性墨水，在多次浸渍过程中重复进行去离子（DI）水冲洗，可以快速沉积致密，高质量的SWCNT网络，从而显着减少了总制造时间，但改善了SWCNT TFT的电性能。该图显示了常规一次性浸入（左）和多次浸入技术（右）的沉积机理。可以在Taehoon Kim，Yongtaek Hong及其同事的文章编号1901413中找到更多详细信息。

更新日期：2020-08-21

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