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Crystal growth and optical properties of a Ce2Si2O7 single crystal
Optical Materials ( IF 3.8 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.optmat.2020.110210
Takahiko Horiai , Shunsuke Kurosawa , Rikito Murakami , Yasuhiro Shoji , Jan Pejchal , Masao Yoshino , Akihiro Yamaji , Hiroki Sato , Yuji Ohashi , Kei Kamada , Yuui Yokota , Akira Yoshikawa

Abstract The scintillators with Ce luminescent centers are widely used for radiation detection. In this study, we focused on the Ce2Si2O7 pyrosilicate scintillator and evaluated its optical and scintillation properties. From the result of the temperature dependence of quantum yield of Ce2Si2O7 under excitation into the Ce3+ 4f-5d1 transition, it was revealed that at 300°C the Ce2Si2O7 had a quantum yield of approximately 40% of that at the room. In addition, Ce2Si2O7 had a light output of 9,400 ± 800 photons/MeV and fast decay time (~34 ns) at room temperature, and therefore, it has potential for application in radiation detection.

中文翻译:

Ce2Si2O7单晶的晶体生长和光学特性

摘要 具有Ce发光中心的闪烁体被广泛用于辐射探测。在这项研究中,我们专注于 Ce2Si2O7 焦硅酸盐闪烁体并评估其光学和闪烁特性。从激发到 Ce3+ 4f-5d1 转变的 Ce2Si2O7 的量子产率的温度依赖性的结果表明,在 300°C 时,Ce2Si2O7 的量子产率约为室温的 40%。此外,Ce2Si2O7 在室温下具有 9,400 ± 800 光子/MeV 的光输出和快速衰减时间(~34 ns),因此在辐射检测中具有应用潜力。
更新日期:2020-11-01
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