Temperature sensitivity is one of the major concern in conventional stacked gate-oxide junctionless tunnel-field-effect transistor (SGO-JL-TFET). In this regard, the authors have investigated the sensitivity toward the temperature variation of the SGO-JL double-gate TFET with low work-function live strip (LWLS-SGO-JL-TFET) and without LWLS-SGO-JL-TFET (SGO-JLTFET). Furthermore, they have analysed and compared the impact of operating temperature variation on the DC, analogue/ radiofrequency and linearity performances of both the devices with the help of simulation results obtained using technology computer-aided design tool. It can be stated that the proposed device is less sensitive toward the temperature variation in terms of carrier concentration, electric field, on-state current and off-state current, as compared with conventional SGO-JL-TFET. Apart from these parameters, proposed device also demonstrates better temperature sensitivity in terms of analogue performance parameters such as transconductance (g _m ) cut-off frequency (f _T ), gain bandwidth product and maximum oscillating frequency (f _max ). Therefore, the proposed device can be a potential candidate for cryogenics and high-temperature applications.

中文翻译：

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SGO金属带JL TFET的温度敏感性分析

在传统的堆叠栅氧化物无结隧穿场效应晶体管（SGO-JL-TFET）中，温度敏感性是主要关注的问题之一。在这方面，作者研究了具有低功函数带电型（LWLS-SGO-JL-TFET）和不具有LWLS-SGO-JL-TFET（SGO）的SGO-JL双栅TFET对温度变化的敏感性-JLTFET）。此外，他们借助使用计算机辅助设计工具获得的仿真结果，分析并比较了工作温度变化对这两种设备的DC，模拟/射频和线性性能的影响。可以说，与常规的SGO-JL-TFET相比，所提出的器件在载流子浓度，电场，通态电流和截止态电流方面对温度变化不敏感。 _m ）截止频率（f _T ），增益带宽乘积和最大振荡频率（f _max ）。因此，所提出的装置可以成为低温和高温应用的潜在候选者。