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Controlled Photoinduced Electron Transfer from InP/ZnS Quantum Dots through Cu Doping: A New Prototype for the Visible-Light Photocatalytic Hydrogen Evolution Reaction.
Nano Letters ( IF 9.6 ) Pub Date : 2020-08-19 , DOI: 10.1021/acs.nanolett.0c00983
Jiwon Bang 1, 2 , Sankar Das 3 , Eun-Jin Yu 3 , Kangwook Kim 1, 4 , Hyunseob Lim 5 , Sungjee Kim 4 , Jong Wook Hong 3
Affiliation  

Photoexcited electron extraction from semiconductors can be useful for converting solar energy into useful forms of energy. Although InP quantum dots (QDs) are considered alternative materials for solar energy conversion, the inherent instability of bare InP QDs demands the use of passivation layers such as ZnS for practical applications, which impedes carrier extraction from the QDs. Here, we demonstrate that Cu-doped InP/ZnS (InP/Cu:ZnS) QDs improve the electron transfer ability due to hole capture by Cu dopants. Steady-state and time-resolved photoluminescence studies confirmed that electrons were effectively transferred from the InP/Cu:ZnS QDs to a benzoquinone acceptor by retarding the electron–hole recombination within the QD. We evaluated the photocatalytic H2 evolution performance of InP/Cu:ZnS QDs under visible light, which showed outstanding photocatalytic H2 evolution activity and stability under visible light illumination. The photocatalytic activity was preserved even in the absence of a cocatalyst.

中文翻译:

InP / ZnS量子点通过Cu掺杂控制的光诱导电子转移:可见光光催化氢发生反应的新原型。

从半导体中提取光激发电子可用于将太阳能转换为有用的能量形式。尽管InP量子点(QD)被认为是用于太阳能转换的替代材料,但裸InP QD固有的不稳定性要求在实际应用中使用钝化层(例如ZnS),这会阻碍从QD中提取载流子。在这里,我们证明了掺杂铜的InP / ZnS(InP / Cu:ZnS)量子点提高了电子的传输能力,这是由于铜掺杂剂捕获了空穴。稳态和时间分辨的光致发光研究证实,电子可通过延迟QD中的电子-空穴复合而有效地从InP / Cu:ZnS量子点转移到苯醌受体。我们评估了光催化H 2InP / Cu:ZnS量子点在可见光下的演化性能,在可见光照射下表现出出色的光催化H 2演化活性和稳定性。即使没有助催化剂,光催化活性也得以保留。
更新日期:2020-09-10
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