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Growth of Transition-Metal Dichalcogenides by Solvent Evaporation Technique
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2020-08-20 , DOI: 10.1021/acs.cgd.0c00980
Dmitriy A. Chareev 1, 2, 3 , Polina Evstigneeva 4 , Dibya Phuyal 5 , Gabriel J. Man 5 , Håkan Rensmo 5 , Alexander N. Vasiliev 3, 6, 7 , Mahmoud Abdel-Hafiez 5, 8
Affiliation  

Due to their physical properties and potential applications in energy conversion and storage, transition-metal dichalcogenides (TMDs) have garnered substantial interest in recent years. Among this class of materials, TMDs based on molybdenum, tungsten, sulfur, and selenium are particularly attractive due to their semiconducting properties and the availability of bottom-up synthesis techniques. Here we report a method which yields high-quality crystals of transition-metal diselenide and ditelluride compounds (PtTe2, PdTe2, NiTe2, TaTe2, TiTe2, RuTe2, PtSe2, PdSe2, NbSe2, TiSe2, VSe2, ReSe2) from their solid solutions, via vapor deposition from a metal-saturated chalcogen melt. Additionally, we show the synthesis of rare-earth-metal polychalcogenides and NbS2 crystals using the aforementioned process. Most of the crystals obtained have a layered CdI2 structure. We have investigated the physical properties of selected crystals and compared them to state of the art findings reported in the literature. Remarkably, the charge density wave transition in 1T-TiSe2 and 2H-NbSe2 crystals is well-defined at TCDW ≈ 200 and 33 K, respectively. Angle-resolved photoelectron spectroscopy and electron diffraction are used to directly access the electronic and crystal structures of PtTe2 single crystals and yield state of the art measurements.

中文翻译:

溶剂蒸发技术生长过渡金属二硫属元素化物

由于其物理性质以及在能量转换和存储中的潜在应用,近年来,过渡金属二硫化碳(TMD)引起了人们的极大兴趣。在这类材料中,基于钼,钨,硫和硒的TMD由于其半导体性能和自下而上的合成技术的可用性而特别具有吸引力。在这里,我们报告了一种产生高质量的过渡金属二硒化物和二碲化物化合物(PtTe 2,PdTe 2,NiTe 2,TaTe 2,TiTe 2,RuTe 2,PtSe 2,PdSe 2,NbSe 2,TiSe 2, VSe2,ReSe 2)从它们的固溶体通过金属饱和硫族元素熔体的气相沉积而形成。此外,我们显示了使用上述方法合成稀土金属多硫属元素化物和NbS 2晶体。获得的大多数晶体具有层状CdI 2结构。我们已经研究了选定晶体的物理性质,并将其与文献中报道的最新技术水平进行了比较。值得注意的是,在T CDW处,1T-TiSe 2和2H-NbSe 2晶体中的电荷密度波跃迁定义明确分别约为200和33K。角分辨光电子能谱和电子衍射可用于直接访问PtTe 2单晶的电子和晶体结构,并能获得最新技术的测量结果。
更新日期:2020-10-07
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