Diffraction‐based techniques, with either electrons or photons, are commonly used in materials science to measure elastic strain in crystalline specimens. In this paper, the focus is on two advanced techniques capable of accessing strain information at the nanoscale: high‐resolution X‐ray diffraction (HRXRD) and the transmission electron microscopy technique of dark‐field electron holography (DFEH). Both experimentally record an image formed by a diffracted beam: a map of the intensity in the vicinity of a Bragg reflection spot in the former, and an interference pattern in the latter. The theory that governs these experiments will be described in a unified framework. The role of the geometric phase, which encodes the displacement field of a set of atomic planes in the resulting diffracted beam, is emphasized. A detailed comparison of experimental results acquired at a synchrotron and with a state‐of‐the‐art transmission electron microscope is presented for the same test structure: an array of dummy metal–oxide–semiconductor field‐effect transistors (MOSFETs) from the 22 nm technology node. Both techniques give access to accurate strain information. Experiment, theory and modelling allow the illustration of the similarities and inherent differences between the HRXRD and DFEH techniques.

中文翻译：

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暗场电子全息术作为现实空间中晶体衍射的记录：使用高分辨率X射线衍射进行MOSFET应变分析的比较研究

材料科学中通常使用具有电子或光子的基于衍射的技术来测量晶体样本中的弹性应变。在本文中，重点是能够访问纳米级应变信息的两种先进技术：高分辨率X射线衍射（HRXRD）和暗场电子全息图（DFEH）的透射电子显微镜技术。两者都实验性地记录了由衍射光束形成的图像：前者中布拉格反射点附近的强度图，后者中则是干涉图。控制这些实验的理论将在一个统一的框架中进行描述。强调了几何相位的作用，它编码一组原子平面在产生的衍射束中的位移场。针对相同的测试结构，详细介绍了在同步加速器和最新型透射电子显微镜下获得的实验结果：来自22个虚拟金属氧化物半导体场效应晶体管（MOSFET）的阵列nm技术节点。两种技术都可以访问准确的应变信息。实验，理论和建模可以说明HRXRD和DFEH技术之间的相似性和固有差异。