The implementation of ultrahigh‐density cross‐point array structures has received considerable interest as emerging storage devices, and threshold switching devices are regarded to be promising as to the suppression of leakage current in cross‐point array structures. Threshold switching devices need to modulate the threshold voltage (V_th) depending on the various memory elements to achieve proper selector device in cross‐point array structures. However, only limited methods are available for controlling V_th. Therefore, the nitrogen (N) doping effects on trap states, density of localized states, and V_th of the amorphous Ga₂Te₃ (a‐Ga₂Te₃) selector devices are investigated herein. Furthermore, the electrical conduction behavior is fitted using a trap‐controlled space charge limited conduction mechanism with two transition voltages, i.e., the space charge limited voltage (V_SCL) and trap‐filled limited voltage (V_TFL). The optical bandgap energy and optical Urbach energy are affected by the N doping in a‐Ga₂Te₃. In addition, N doping in a‐Ga₂Te₃ increases the density of localized states. These effects increase both the transition voltages (V_SCL and V_TFL). Thus, doping a‐Ga₂Te₃ with N reduces V_th when the trap states are changed. Furthermore, N‐doped a‐Ga₂Te₃ selector devices exhibit highly reliable switching up to 10⁹ cycles.

中文翻译：

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氮掺杂对非晶态Ga2Te3选择器器件阈值电压的影响

随着新兴的存储设备的出现，超高密度交叉点阵列结构的实现引起了人们的极大兴趣，阈值开关设备被认为在抑制交叉点阵列结构中的泄漏电流方面很有前途。阈值开关设备需要根据各种存储元件来调制阈值电压（V _th），以在交叉点阵列结构中实现合适的选择器设备。但是，只有有限的方法可用于控制V _th。因此，氮（N）掺杂对非晶态Ga ₂ Te ₃（a-Ga ₂ Te ）的陷阱态，局部态密度和V _th的影响₃）本文研究了选择器装置。此外，使用具有两个过渡电压的陷阱控制的空间电荷限制传导机制来拟合电导行为，即，空间电荷限制电压（V _SCL）和陷阱填充的限制电压（V _TFL）。光学带隙能和Urbach光学能受a-Ga ₂ Te _3中N掺杂的影响。此外，在a-Ga ₂ Te _3中掺杂N会增加局部态的密度。这些影响会同时增加两个过渡电压（V _SCL和V _TFL）。因此，掺杂a-Ga ₂ Te当陷阱状态改变时，具有N的₃减小V _th。此外，掺N的a-Ga ₂ Te ₃选择器器件显示高达10 ⁹个周期的高度可靠的切换。