High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector,Physica Status Solidi (A) - Applications and Materials Science

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High‐Quality GaN Crystal Grown on Laser Decomposed GaN–Sapphire Substrate and Its Application in Photodetector
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-08-19 , DOI: 10.1002/pssa.202000380
Haixiao Hu ₁ , Baoguo Zhang ₁ , Yongzhong Wu _{1,

2} , Yongliang Shao _{1,

2} , Lei Liu ₁ , Xiaopeng Hao _{1,

2}

Affiliation

The lack of high‐quality gallium nitride (GaN) wafers may be a non‐negligible bottleneck restricting the development of GaN‐based devices. Although various processing methods have been used to reduce dislocation density, there is still plenty of room for the reduction of stress in GaN crystal. Herein, laser decomposition is verified as an efficient technique to reduce the interfacial stress in GaN–sapphire and improve the lateral epitaxial growth quality of GaN crystal. The variation of the stress on surface and at a depth of 2 μm by controlling the incident pulse energy is systematically studied and the physical mechanism of laser decomposition process is discussed. As the incident energy increases, the stress is weakened within a certain range. Experimental evidences of the good growth quality are displayed by the investigation of high‐resolution X‐ray diffraction, electron backscattered diffraction, and photoluminescence. Furthermore, high‐quality UV photodetectors based on the as‐obtained GaN are fabricated successfully, which show a strong photocurrent response and excellent stability. This work may pave a way towards improving crystal growth and provides a new insight for tuning interface stress so as to develop desired devices.

中文翻译：

激光分解GaN-蓝宝石衬底上生长的高质量GaN晶体及其在光电探测器中的应用

缺乏高质量的氮化镓（GaN）晶圆可能是制约基于GaN的器件发展的不可忽略的瓶颈。尽管已经使用各种处理方法来降低位错密度，但是仍然有足够的空间来减小GaN晶体中的应力。在此，激光分解被证明是一种有效的技术，可以减少GaN-蓝宝石中的界面应力并提高GaN晶体的横向外延生长质量。通过控制入射脉冲能量，系统研究了表面和2μm深度处应力的变化，并讨论了激光分解过程的物理机理。随着入射能量的增加，应力在一定范围内减弱。通过高分辨率X射线衍射，电子背散射衍射和光致发光的研究显示了良好生长质量的实验证据。此外，成功制造了基于所获得的GaN的高质量UV光电探测器，该探测器具有很强的光电流响应和出色的稳定性。这项工作可以为改善晶体生长铺平道路，并为调整界面应力提供新的见解，从而开发出所需的器件。

更新日期：2020-10-22

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