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Growth and Stress Analysis of Spontaneous Nucleation c‐Plane Bulk AlN Crystals by a PVT Method
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-08-19 , DOI: 10.1002/crat.202000118 Guodong Wang 1 , Lei Zhang 1 , Yong Wang 1 , Yongliang Shao 1 , Chengmin Chen 2 , Guangxia Liu 2 , Xiaogang Yao 1 , Yongzhong Wu 1 , Xiaopeng Hao 1
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-08-19 , DOI: 10.1002/crat.202000118 Guodong Wang 1 , Lei Zhang 1 , Yong Wang 1 , Yongliang Shao 1 , Chengmin Chen 2 , Guangxia Liu 2 , Xiaogang Yao 1 , Yongzhong Wu 1 , Xiaopeng Hao 1
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AlN is a kind of promising semiconductor material for high‐efficiency optoelectronic devices and high‐power high‐frequency electronic devices. In this work, high‐quality c‐plane AlN single crystal with low‐stress is grown on tungsten (W) substrate using a spontaneous nucleation physical vapor transport (PVT) method. Temperature field simulation and theoretical analysis provide a theoretical guide for the AlN crystals growth experiment. The hexagonal appearance c‐plane AlN crystal is obtained with a size up to 3 mm × 3 mm. A large radial temperature gradient and suitable supersaturation lead to a low nucleation density and the growth of AlN crystal with large size, which can be used to regulate nucleation density and size of AlN crystals on W substrate. X‐ray diffraction (XRD), Raman and electron backscatter diffraction (EBSD) results confirm that the crystal is grown along the c‐axis direction with hexagonal wurtzite structure and high crystalline quality. The Raman micro‐mapping results indicate that the grown AlN crystal has small tensile stress, close to free‐stress, and the biaxial stress decreases from interface to surface along with the increasing of crystal thickness. This work will greatly contribute to the research of AlN crystal growth on W substrate.
中文翻译：
PVT法自发成核c平面AlN晶体的生长和应力分析
AlN是一种有前途的半导体材料，可用于高效光电器件和大功率高频电子器件。在这项工作中，使用自发成核物理气相传输（PVT）方法在钨（W）衬底上生长了具有低应力的高质量c平面AlN单晶。温度场模拟和理论分析为AlN晶体生长实验提供了理论指导。六角形外观c可获得最大3 mm×3 mm的平面AlN晶体。较大的径向温度梯度和合适的过饱和度导致较低的成核密度和较大尺寸的AlN晶体的生长，可用于调节W衬底上AlN晶体的成核密度和尺寸。X射线衍射（XRD），拉曼和电子背散射衍射（EBSD）结果证实，晶体沿c轴方向生长，具有六方纤锌矿结构和高结晶质量。拉曼显微映射结果表明，生长的AlN晶体拉伸应力小，接近自由应力，随着晶体厚度的增加，双轴应力从界面到表面逐渐减小。这项工作将大大有助于W衬底上AlN晶体生长的研究。
更新日期：2020-10-07
中文翻译：
PVT法自发成核c平面AlN晶体的生长和应力分析
AlN是一种有前途的半导体材料，可用于高效光电器件和大功率高频电子器件。在这项工作中，使用自发成核物理气相传输（PVT）方法在钨（W）衬底上生长了具有低应力的高质量c平面AlN单晶。温度场模拟和理论分析为AlN晶体生长实验提供了理论指导。六角形外观c可获得最大3 mm×3 mm的平面AlN晶体。较大的径向温度梯度和合适的过饱和度导致较低的成核密度和较大尺寸的AlN晶体的生长，可用于调节W衬底上AlN晶体的成核密度和尺寸。X射线衍射（XRD），拉曼和电子背散射衍射（EBSD）结果证实，晶体沿c轴方向生长，具有六方纤锌矿结构和高结晶质量。拉曼显微映射结果表明，生长的AlN晶体拉伸应力小，接近自由应力，随着晶体厚度的增加，双轴应力从界面到表面逐渐减小。这项工作将大大有助于W衬底上AlN晶体生长的研究。
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