Abstract Li–Nb–O amorphous films were deposited onto Si substrates by the radio-frequency magnetron sputtering method in an Ar environment and an Ar(60%)+O2(40%) gas mixture. A positive effective fixed oxide charge Qeff having negative, -Qeff, and positive, +Qeff, components, exists in the as-grown heterostructures. -Qeff is located near the substrate/film interface, whereas + Qeff is determined by a deficit of Li and O (vacancies) in the bulk of Li–Nb–O films. As-grown films crystallize under thermal annealing (TA) at temperatures up to 600 °C and reveal. The formation of polycrystalline LiNbO3. TA at the temperature of about 520 °C results in the formation of the second phase LiNb3O8, increasing + Qeff, and compensating -Qeff entirely. The dielectric constant of the as-grown films exhibits two peaks at the annealing temperatures of 450 °C and 550 °C that are attributed to the total crystallization and recrystallization of the LN films under TA, respectively.

中文翻译：

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非晶Li-Nb-O薄膜结晶下的氧化物电荷演化

摘要 在 Ar 环境和 Ar(60%)+O2(40%) 气体混合物中，通过射频磁控溅射方法在 Si 衬底上沉积 Li-Nb-O 非晶薄膜。具有负的-Qeff 和正的+Qeff 分量的正有效固定氧化物电荷Qeff 存在于生长的异质结构中。-Qeff 位于衬底/薄膜界面附近，而 + Qeff 由大部分 Li-Nb-O 薄膜中的 Li 和 O（空位）不足决定。生长的薄膜在高达 600 °C 的温度下在热退火 (TA) 下结晶并显示出来。多晶 LiNbO3 的形成。TA 在约 520 °C 的温度下导致形成第二相 LiNb3O8，增加 + Qeff，并完全补偿 -Qeff。