Abstract To ensure the magnetostrictive softness, the homogeneity as well as a decrease of shear-lag effect and space-saving construction of narrowed longitudinal-transverse L-T magnetoelectric (ME) composites, a novel parallel-connected-multi-bars (PCMB) geometry of PZT/Metglas is proposed and investigated from simulation towards experiment. In this case, Metglas layers are structured in different geometries from the conventional single bar (c-SB) to conventional separated multiple bars (c-SMB), elongated separate multi-bar (e-SMB) and n-magnetic-bar based PCMB (n-PCMB). This n-PCMB geometry divides the conventional ME configuration into n parallel-connected ME units (n-PCMEU) according to the magnetic geometries. The optimal ME performance with the largest ME voltage coefficient αE of 630 V/cm.Oe is found in PCMEU with two Metglas bars (n = 2). The ME voltage coefficient can be further multiplied by integrating m of these optimal PCMEUs in series to form the serial-parallel ME unit array m-S(n-PMEU)A. Indeed, the αE value is increased by a factor of 3.6 and reaches 2.238 kV/cm.Oe for 4-S(2-PMEU)A, a factor that is almost equal to m. The corresponding 4-S(2-PMEU)A sensor exhibits the huge sensitivity of 18.1 μV/nT and a resolution of 10-1 nanoTesla.

中文翻译：

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具有磁致伸缩均匀层压板的串并联 Metglas/PZT 阵列中的巨磁电效应

摘要 为确保窄纵横 LT 磁电 (ME) 复合材料的磁致伸缩柔软性、均匀性以及减少剪切滞后效应和节省空间的结构，一种新型的平行连接多杆 (PCMB) 几何形状的提出了 PZT/Metglas，并从模拟到实验进行了研究。在这种情况下，Metglas 层具有不同的几何结构，从传统的单条 (c-SB) 到传统的分离多条 (c-SMB)、细长的分离多条 (e-SMB) 和基于 n-磁条的 PCMB (n-PCMB)。这种 n-PCMB 几何结构根据磁性几何结构将传统 ME 配置划分为 n 个并联连接的 ME 单元 (n-PCMEU)。在具有两个 Metglas 棒（n = 2）的 PCMEU 中发现了具有最大 ME 电压系数 αE 为 630 V/cm.Oe 的最佳 ME 性能。ME电压系数可以通过将这些最佳PCMEU中的m个串联集成来进一步乘以形成串并联ME单元阵列mS(n-PMEU)A。实际上，对于 4-S(2-PMEU)A，αE 值增加了 3.6 倍，达到 2.238 kV/cm.Oe，该系数几乎等于 m。相应的 4-S(2-PMEU)A 传感器具有 18.1 μV/nT 的巨大灵敏度和 10-1 纳特斯拉的分辨率。