Abstract WO3 has a great potential in the field of optoelectronics. Herein, sub-stoichiometric WO3-x thin film is prepared and WO3-x/Si n-n homotype heterojunction with pronounced rectifying behavior is constructed. Moreover, the heterojunction exhibits excellent photodetection characteristics, including a large responsivity of 72.8 A/W, a high specific detectivity of 3.96 × 1011 Jones and fast response times of 5.8 μs/1.27 ms. The mechanism of photoinduced charge separation and transfer in the WO3-x/Si n-n homotype heterojunction is analyzed by Kelivn probe force microscopy. These results suggest that the WO3-x/Si n-n homotype heterojunction is of excellent performance in the field of optoelectronic application.

中文翻译：

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具有高性能光电探测特性的 WO3-x/Si nn 同型异质结

摘要 WO3在光电子领域具有巨大的潜力。在此，制备了亚化学计量的 WO3-x 薄膜，并构建了具有显着整流行为的 WO3-x/Sinn 同型异质结。此外，异质结表现出优异的光电探测特性，包括 72.8 A/W 的大响应度、3.96 × 1011 Jones 的高比探测率和 5.8 μs/1.27 ms 的快速响应时间。通过Kelivn探针力显微镜分析WO3-x/Si nn 同型异质结中光致电荷分离和转移的机制。这些结果表明WO3-x/Si nn 同型异质结在光电应用领域具有优异的性能。