High saturation magnetization, hysteresis-less long linear response range, and resistance to device fabrication conditions are figures of merit for magnetic materials. Despite advances in materials research, many high-saturating micro- and nanomagnetic materials are hysteresis-prone, have short linear ranges, and are sensitive to oxidation, resulting in device inefficiencies in high-frequency electronics and unpredictable responses in magnetic sensing applications. Holmium oxide is a promising material because of its high magnetic susceptibility, but synthetic options are limited, with low-temperature magnetism incompletely characterized. Here, we present physical vapor deposition synthesis and material characterization of polycrystalline holmium oxide thin films. The product has saturation magnetization exceeding 2 Tesla, linear range (μ₀H) also exceeding 2 Tesla, zero magnetic remanence and coercivity, and resistance to harsh processing conditions including oxygen plasma and concentrated hydrofluoric acid etching, making these thin films ideal for fabricating next-generation nanoscale magnetic devices in advanced scientific and engineering applications.

高饱和磁化强度，无磁滞的长线性响应范围以及对器件制造条件的抵抗力是磁性材料的优点。尽管在材料研究方面取得了进步，但许多高饱和度的微磁性和纳米磁性材料还是容易产生磁滞现象，线性范围短并且对氧化敏感，从而导致高频电子设备效率低下，并且在磁传感应用中出现不可预测的响应。氧化由于具有很高的磁化率，因此是很有前途的材料，但是其合成选择受到限制，低温磁场的特征不完全。在这里，我们介绍了物理气相沉积合成和多晶氧化thin薄膜的材料表征。该产品的饱和磁化强度超过2 Tesla，线性范围（μ ₀ ħ）也超过2特斯拉，零剩磁和矫顽力，和耐严酷的加工条件包括氧气等离子体和浓氢氟酸腐蚀，使得这些薄膜非常适用于先进的科学和工程应用制造下一代纳米级磁性器件。