Abstract The UV photocurrent response of thin films of wide bandgap semiconductors such as zinc oxide (ZnO) can be applied to a great number of electronic devices aiming applications in environmental sensing or UV-detection. Electronic devices like thin-film transistors or Schottky diodes commonly present multiple parameters of electrical characteristic, which can be beneficially exploited to provide more information than sensors based on purely resistive or capacitive response. We manufactured Schottky diodes using spray-coated ZnO and poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS) as an easy, simple and low-cost method for producing multiparametric UV-photodetectors. The diode parameters presented rectification ratios (RR) as high as 104 and ideality factors as low as 1.3, and their characteristic curves were analyzed by Cheung's method to determine the effect of UV irradiation on the ideality factor, series resistance and Schottky barrier height. The study of the photocurrent response from spray-coated ZnO films as a function of geometric parameters and UV intensity demonstrated a transition from bimolecular to monomolecular recombination process at higher irradiance values, as a result of the adsorption/desorption dynamics of molecular oxygen at the semiconductor/air interface.

中文翻译：

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基于氧化锌的器件的紫外光电流响应：应用于 ZnO/PEDOT：PSS 氢化肖特基二极管

摘要 宽带隙半导体如氧化锌 (ZnO) 薄膜的紫外光电流响应可应用于大量电子设备，旨在应用于环境传感或紫外检测。像薄膜晶体管或肖特基二极管这样的电子设备通常会呈现多个电气特性参数，与基于纯电阻或电容响应的传感器相比，可以有利地利用这些参数提供更多信息。我们使用喷涂 ZnO 和聚（3,4-亚乙基二氧噻吩）-聚（苯乙烯磺酸盐）（PEDOT：PSS）制造肖特基二极管，作为生产多参数紫外光电探测器的简单、简单和低成本的方法。二极管参数显示整流比 (RR) 高达 104，理想因子低至 1.3，并通过Cheung的方法分析它们的特性曲线，以确定紫外线照射对理想因子、串联电阻和肖特基势垒高度的影响。对喷涂 ZnO 薄膜的光电流响应作为几何参数和 UV 强度的函数的研究表明，由于分子氧在半导体上的吸附/解吸动力学，在较高辐照度值下，从双分子到单分子复合过程的转变/空中接口。