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IR-to-THz Down Conversion in Nonlinear GaSe:Al Crystals
Bulletin of the Russian Academy of Sciences: Physics Pub Date : 2020-08-20 , DOI: 10.3103/s1062873820070163
D. M. Lubenko , D. M. Ezhov , V. F. Losev , Yu. M. Andreev , G. V. Lanskii

Abstract

The optical properties and hardness of GaSe, GaSe:Al, GaSe:S:Al, and GaSe:Al:O crystals are studied to create effective terahertz radiation generators. Doped crystals differ from pure GaSe in high mechanical and optical properties at a optimum doping level. Oxygen doping allows wide ranging changes in birefringence in the terahertz range.


中文翻译:

非线性GaSe:Al晶体中的IR至THz下变频

摘要

研究了GaSe,GaSe:Al,GaSe:S:Al和GaSe:Al:O晶体的光学性质和硬度,以创建有效的太赫兹辐射发生器。在最佳掺杂水平下,掺杂晶体与纯GaSe的不同之处在于高机械和光学性能。氧掺杂可以使太赫兹范围内的双折射发生较大范围的变化。
更新日期:2020-08-20
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