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Mathematical Modeling of Heat and Mass Transfer Phenomena Caused by Interaction between Electron Beams and Planar Semiconductor Multilayers
Bulletin of the Russian Academy of Sciences: Physics Pub Date : 2020-08-20 , DOI: 10.3103/s1062873820070138
V. V. Kalmanovich , E. V. Seregina , M. A. Stepovich

Abstract

An analytical matrix method is proposed for the mathematical modeling of heat and mass transfer caused by the interaction between broad electron beams and planar semiconductor multilayers. Some possibilities of using this approach to estimating the excess minority carrier distributions in planar semiconductor multilayers are discussed. It is shown that the proposed matrix method allows calculation of the excess minority carrier distributions in a relatively short time with an accuracy sufficient for use in electron probe techniques.


中文翻译:

电子束与平面半导体多层膜相互作用引起的传热传质现象的数学建模

摘要

提出了一种解析矩阵方法,对宽电子束与平面半导体多层膜之间的相互作用引起的传热和传质进行数学建模。讨论了使用这种方法来估计平面半导体多层中多余的少数载流子分布的一些可能性。结果表明,所提出的矩阵方法允许在相对短的时间内计算出足够的少数载流子分布,其准确度足以用于电子探针技术。
更新日期:2020-08-20
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