A model for lateral-type refracting-facet spin-photodiodes based on ferromagnetic metal-insulator-semiconductor (FM-I-S) junctions is described. The model utilizes spin and charge drift-diffusion equations and spin-dependent tunneling equations which are simultaneously solved numerically in order to obtain a self-consistent solution. The model is used to analyze and optimize the refracting-facet spin-photodiode structure. The relation between the active layer thickness and the effective lifetime of photo-generated electrons is investigated. Results show that the optimum active layer thickness depends on both effective lifetimes of photo-generated electrons and spins. The influence of empty density-of-state of ferromangetic metals is also explored.

中文翻译：

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基于铁磁金属-绝缘体-半导体隧道结的折射面自旋光电二极管的建模与优化

描述了基于铁磁金属-绝缘体-半导体 (FM-IS) 结的横向型折射面自旋光电二极管模型。该模型利用自旋和电荷漂移扩散方程以及与自旋相关的隧道方程同时进行数值求解以获得自洽解。该模型用于分析和优化折射面自旋光电二极管结构。研究了活性层厚度与光生电子有效寿命之间的关系。结果表明，最佳有源层厚度取决于光生电子的有效寿命和自旋。还探讨了铁磁性金属的空态密度的影响。