当前位置：
X-MOL 学术
›
Chem. Mater.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Suppression of Auger Recombination by Gradient Alloying in InAs/CdSe/CdS QDs
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-08-19 , DOI: 10.1021/acs.chemmater.0c01788 Laxmi Kishore Sagar 1 , Golam Bappi 1 , Andrew Johnston 1 , Bin Chen 1 , Petar Todorović 1 , Larissa Levina 1 , Makhsud I. Saidaminov 1, 2 , F. Pelayo García de Arquer 1 , Dae-Hyun Nam 3 , Min-Jae Choi 1, 4 , Sjoerd Hoogland 1 , Oleksandr Voznyy 5 , Edward H. Sargent 1
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-08-19 , DOI: 10.1021/acs.chemmater.0c01788 Laxmi Kishore Sagar 1 , Golam Bappi 1 , Andrew Johnston 1 , Bin Chen 1 , Petar Todorović 1 , Larissa Levina 1 , Makhsud I. Saidaminov 1, 2 , F. Pelayo García de Arquer 1 , Dae-Hyun Nam 3 , Min-Jae Choi 1, 4 , Sjoerd Hoogland 1 , Oleksandr Voznyy 5 , Edward H. Sargent 1
Affiliation
|
Colloidal quantum dots are promising for low-cost optoelectronic devices such as solar cells, light-emitting diodes (LEDs), lasers, and photodetectors. InAs-based quantum dots (QDs) are well suited for near-infrared (NIR) applications; however, to date, the highest-QY InAs QDs have exhibited short biexciton Auger lifetimes of ∼<50 ps. Here, we report a band engineering strategy that doubles the Auger lifetime in InAs CQDs. By developing a continuously graded thick CdSexS1–x shell, we synthesize InAs/CdSexS1–x/CdS CQDs that enable a smooth progression from the core to the outer shell, slowing the Auger process. We report a biexciton Auger lifetime of ∼105 ps compared to 17 ps for control InAs/CdSe/CdS CQDs. This represents a 2× increase of the Auger lifetime relative to the best value reported for InAs CQDs in prior literature.
中文翻译：
InAs / CdSe / CdS量子点中梯度合金抑制俄歇复合
胶体量子点有望用于低成本光电器件，例如太阳能电池，发光二极管（LED），激光器和光电探测器。基于InAs的量子点（QD）非常适合于近红外（NIR）应用。但是，迄今为止，QY最高的InAs QD的双激子俄歇寿命短至<50 ps。在这里，我们报告了一种波段工程策略，可以使InAs CQD中的俄歇寿命延长一倍。通过开发连续分级的厚CdSe x S 1– x壳，我们合成了InAs / CdSe x S 1 –x/ CdS CQD可实现从核到外壳的平滑过渡，从而减慢了俄歇过程。我们报告的双激子俄歇寿命约为105 ps，而对照InAs / CdSe / CdS CQD的双激子寿命为17 ps。相对于现有文献中报道的InAs CQD最佳值，俄歇寿命增加了2倍。
更新日期：2020-09-22
中文翻译：
InAs / CdSe / CdS量子点中梯度合金抑制俄歇复合
胶体量子点有望用于低成本光电器件，例如太阳能电池，发光二极管（LED），激光器和光电探测器。基于InAs的量子点（QD）非常适合于近红外（NIR）应用。但是，迄今为止，QY最高的InAs QD的双激子俄歇寿命短至<50 ps。在这里，我们报告了一种波段工程策略，可以使InAs CQD中的俄歇寿命延长一倍。通过开发连续分级的厚CdSe x S 1– x壳，我们合成了InAs / CdSe x S 1 –x/ CdS CQD可实现从核到外壳的平滑过渡，从而减慢了俄歇过程。我们报告的双激子俄歇寿命约为105 ps，而对照InAs / CdSe / CdS CQD的双激子寿命为17 ps。相对于现有文献中报道的InAs CQD最佳值，俄歇寿命增加了2倍。
京公网安备 11010802027423号