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Prediction of single event upset critical charge and sensitive volume depth by energy deposition analysis of low energy protons
Radiation Effects and Defects in Solids ( IF 1 ) Pub Date : 2020-08-19 , DOI: 10.1080/10420150.2020.1806838 Wen Zhao 1, 2 , Wei Chen 2 , Chaohui He 1 , Rongmei Chen 3 , Liang Wang 4 , Zujun Wang 2 , Peitian Cong 2 , Xiaoqiang Guo 2 , Chen Shen 5
Radiation Effects and Defects in Solids ( IF 1 ) Pub Date : 2020-08-19 , DOI: 10.1080/10420150.2020.1806838 Wen Zhao 1, 2 , Wei Chen 2 , Chaohui He 1 , Rongmei Chen 3 , Liang Wang 4 , Zujun Wang 2 , Peitian Cong 2 , Xiaoqiang Guo 2 , Chen Shen 5
Affiliation
Single Event Upset (SEU) critical charge and sensitive volume depth of 65-nm CMOS bulk SRAM are predicted through energy deposition analysis of low energy protons. The deposited energy distribution...
中文翻译：
通过低能质子能量沉积分析预测单粒子翻转临界电荷和敏感体积深度
通过低能质子的能量沉积分析预测 65 纳米 CMOS 体 SRAM 的单事件翻转 (SEU) 临界电荷和敏感体积深度。沉积能量分布...
更新日期：2020-08-19
中文翻译：
通过低能质子能量沉积分析预测单粒子翻转临界电荷和敏感体积深度
通过低能质子的能量沉积分析预测 65 纳米 CMOS 体 SRAM 的单事件翻转 (SEU) 临界电荷和敏感体积深度。沉积能量分布...
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