After evolving side by side over the past three decades, insulated gate bipolar transistors (IGBTs) and metal–oxide–semiconductor field-effect transistor (MOSFETs) become two main options in high power semiconductor market of Hybrid Electric Vehicle (HEV) or Battery Electric Vehicle (BEV) systems. Recent improvements on high power performance are focused on the reduction of power losses and the enhancement of system reliability. Power losses of Si-based semiconductor are dissipated in the form of heat, which must be transferred away from the switching junction effectively. In this paper, we evaluate the new vapour chamber wick design and its heat spreading performance on a SiC-based MOSFETs, the results could be used as guides in order to provide a solution to tackle with thermal imbalance incurred by switching current. The selected cases showed that Silicon carbide (SiC) based MOSFETs could operate at more uniform temperature gradient with minimum 1.4 °C temperature difference across the whole bonding interfaces, and hotspots can be constrained below 120 °C by means of phase changing cooling methods. In addition, the replacement of conventional baseplate by vapour chamber could further reduce overall thermal resistance from junctions to coolant fluids. The simulation results show that wicks design with sintering methods could perform better than groove and mesh design in such high power application. At last, under low coolant flow rate chanlleges at 0.5 l/min, an integrated vapour chamber with ellipse pin–fin 16 × 20 is preferred with achieved temperature at 123.3 °C.

在过去的三十年里，绝缘栅双极晶体管（IGBT）和金属氧化物半导体场效应晶体管（MOSFET）并肩发展之后，它们成为混合动力汽车（HEV）或电池电力的高功率半导体市场的两个主要选择车辆（BEV）系统。高功率性能的最新改进集中在减少功率损耗和增强系统可靠性上。硅的功率损耗半导体以热量的形式散发，必须有效地将其从开关结转移出去。在本文中，我们评估了新的蒸气室灯芯设计及其在基于SiC的MOSFET上的散热性能，该结果可以用作指导，以便为解决因开关电流引起的热不平衡提供解决方案。选定的案例表明，基于碳化硅（SiC）的MOSFET可以在更均匀的温度梯度下工作，整个键合界面的温差最小为1.4°C，并且可以通过相变冷却方法将热点限制在120°C以下。另外，用蒸气室代替传统的底板可以进一步减小从接合点到冷却液的总热阻。仿真结果表明，在如此高功率的应用中，采用烧结方法的灯芯设计比沟槽和网格设计的性能更好。最后，在冷却剂流速低至0.5 l / min的情况下，最好使用具有16×20椭圆形针形翅片的集成蒸汽室，并达到123.3°C的温度。