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An effective strategy for the preparation of intrinsic low-k and ultralow-loss dielectric polysiloxanes at high frequency by introducing trifluoromethyl groups into the polymers
Polymer Chemistry ( IF 4.1 ) Pub Date : 2020-08-18 , DOI: 10.1039/d0py00909a
Fengping Liu 1, 2, 3, 4, 5 , Xingrong Chen 1, 2, 3, 4, 5 , Linxuan Fang 1, 2, 3, 4, 5 , Jing Sun 1, 2, 3, 4, 5 , Qiang Fang 1, 2, 3, 4, 5
Affiliation  

Two new trifluoromethyl-containing organosiloxanes with cross-linkable styrene groups have been facilely synthesized by the Piers–Rubinsztajn reaction. The homopolymerization of these organosiloxanes at high temperature gives polysiloxanes, one of which exhibits a dielectric constant (Dk) below 2.53 with an ultralow dielectric loss (Df) of 1.66 × 10−3 at a high frequency of 5 GHz. In contrast, a control non-fluorinated polysiloxane sample with methoxy groups exhibits higher Dk of 2.78 and Df of 2.07 × 10−2. Moreover, the trifluoromethyl-containing polysiloxanes show no obvious change in Dk and Df even after immersing them in boiling water for 96 h. This result is attributed to the low water uptake of the polymers (near to 0.1%). These data indicate that this work provides a facile and effective way for the preparation of intrinsic low-k and low-loss materials used in the microelectronics industry. Based on the good properties, these fluorinated polysiloxanes are suitable as matrix or encapsulation resins for the fabrication of devices used in high-frequency communication.

中文翻译:

通过将三氟甲基基团引入聚合物中以高频率制备固有的低k和超低损耗介电聚硅氧烷的有效策略

通过Piers-Rubinsztajn反应已轻松合成了两种具有可交联苯乙烯基团的新型含三氟甲基的有机硅氧烷。这些有机硅氧烷在高温下均聚,得到聚硅氧烷,其中之一在5 GHz高频下的介电常数(D k)低于2.53,超低介电损耗(D f)为1.66×10 -3。相反,具有甲氧基的对照非氟化聚硅氧烷样品表现出更高的D k为2.78和D f为2.07×10 -2。而且,含三氟甲基的聚硅氧烷的D k没有明显变化。d ˚F甚至在96小时沸水浸泡后他们。该结果归因于聚合物的低吸水率(接近0.1%)。这些数据表明,这项工作为微电子工业中使用的本征低k和低损耗材料的制备提供了简便有效的方法。基于良好的性能,这些氟化聚硅氧烷适合作为基质或封装树脂,用于制造高频通信中使用的设备。
更新日期:2020-10-06
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