Radiation-hardened image sensors have been developed over the last few decades. Most of these studies have examined sensor properties before and after radiation, but few have described images during radiation. We have developed a new type of radiation-hardened pixel and integrated it into a 1.3-Mpixel, 18-bit digital CMOS image sensor. The pixel area incorporates several types of variation, and the sensor was analyzed during 60Co gamma-ray radiation at a rate above 1 kGy/h; the total ionizing dose (TID) was as high as 200 kGy. As a result, one type of pixel showed a negligibly small dark-level increase over the entire period. Conversely, the organic color filters degraded, even at a TID as low as 10 kGy.

中文翻译：

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抗辐射 CMOS 图像传感器，其像素在电离辐射期间表现出可忽略不计的小暗电平增加


抗辐射图像传感器在过去几十年中得到了发展。这些研究大多数都检查了辐射前后的传感器特性，但很少描述辐射期间的图像。我们开发了一种新型抗辐射像素，并将其集成到 1.3 百万像素、18 位数字 CMOS 图像传感器中。像素区域包含多种类型的变化，并且在 60Co 伽马射线辐射速率高于 1 kGy/h 的情况下对传感器进行了分析；总电离剂量（TID）高达200 kGy。结果，一种类型的像素在整个周期内显示出可忽略不计的小暗电平增加。相反，即使 TID 低至 10 kGy，有机滤色片也会降解。