Back-thinned silicon detectors offer a high response over a very broad spectrum for direct detection by providing an efficient optical path into the sensing silicon avoiding front face structures manufactured from metal, polysilicon, nitrides, and oxides that may absorb the incident light before reaching the sensing silicon. We have tested two CCDs with different back-surface shallow p+ implant thicknesses (basic and enhanced) at the M4 line (wavelength between 40 and 400 nm) at Physikalisch-Technische Bundesanstalt (PTB)'s Metrology Light Source in Berlin. This characterization in the ultraviolet spectral range extends the soft X-ray quantum efficiency (QE) data set previously acquired with the exact same devices. Due to the short absorption depth and the scope for many types of interactions of the device materials with ultraviolet photons, QE measurement and stability of the device against extended exposure in the UV are of ongoing interest. Therefore, QE measurements have been carried out before and after exposures to quantify any change in behavior. To allow characterization of the passivation processes only, the devices have no antireflection coating. The measured QE of the standard back-thinned CCD is below 10% between 70 and 370 nm. An average additional 5% efficiency is achieved in the enhanced device within the same range. At the limits of the measured spectrum, toward soft X-rays or toward the visible range, the QE increases and the difference between the standard and the enhanced process is reduced as the photon absorption length increases beyond the immediate back-surface. The measured QE after long high-flux exposures at 200 nm shows remarkable improvement.

中文翻译：

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两种市售钝化处理的背照式探测器紫外量子效率比较


背照式硅探测器通过提供进入传感硅的有效光路，在非常宽的光谱范围内提供高响应，从而避免使用由金属、多晶硅、氮化物和氧化物制成的正面结构，这些结构可能会在入射光到达目标之前吸收入射光。传感硅。我们在柏林联邦物理技术技术中心 (PTB) 的计量光源的 M4 线（波长在 40 至 400 nm 之间）测试了两个具有不同背面浅 p+ 注入厚度（基本和增强）的 CCD。这种紫外光谱范围内的表征扩展了之前使用完全相同的设备获取的软 X 射线量子效率 (QE) 数据集。由于吸收深度短以及器件材料与紫外光子相互作用的范围广泛，QE 测量和器件在紫外线下长时间暴露的稳定性一直受到人们的关注。因此，在暴露之前和之后都进行了 QE 测量，以量化行为的任何变化。为了仅对钝化过程进行表征，这些器件没有抗反射涂层。标准背照式 CCD 的测量 QE 在 70 至 370 nm 之间低于 10%。在相同范围内，增强型器件的效率平均提高了 5%。在测量光谱的极限处，对于软 X 射线或可见光范围，随着光子吸收长度增加到超出直接背面，QE 会增加，并且标准工艺和增强工艺之间的差异会减小。在 200 nm 下长时间高通量照射后测得的 QE 显示出显着的改善。