We have investigated the structural and optical characteristics of planar GaN epitaxial layers on silicon substrates, formed by coalescing an array of GaN nanowires, and of In0.32Ga0.68N/GaN self-organized quantum dots grown on the GaN layer. The as-grown coalesced GaN layer is of the cubic crystalline form, with a large density of stacking faults, that transforms to the wurtzite form, devoid of most of the stacking faults, upon post-growth annealing. Multiple layers of the quantum dots emit at 550 nm. Temperature-dependent and time-resolved photoluminescence measurements have been made to determine the temperature dependent radiative and non-radiative lifetimes of the quantum dots.

中文翻译：

---

具有聚结纳米线缓冲层的硅上 InGaN/GaN 量子点：一种用于可见光硅光子学的潜在技术

我们研究了硅衬底上平面 GaN 外延层的结构和光学特性，该外延层是通过合并 GaN 纳米线阵列形成的，以及生长在 GaN 层上的 In0.32Ga0.68N/GaN 自组织量子点。生长的聚结 GaN 层为立方晶形，具有大密度的堆垛层错，在生长后退火后转变为纤锌矿形式，没有大部分堆垛层错。多层量子点在 550 nm 处发射。已经进行了温度相关和时间分辨光致发光测量，以确定量子点的温度相关辐射和非辐射寿命。