This article presents an inductorless wideband balun low noise amplifier (LNA), which uses noise reduction and linearity optimization techniques at low supply voltages. The proposed self forward body biased LNA uses inverter type amplifier structure as input stage for impedance matching while output stages are noise reduction stages, which partially cancel the noise of the input stage. In addition to noise reduction, transistors are biased near‐zero third‐order transconductance region to maximize third‐order input‐referred intercept point (IIP3) performance at low supply voltages. The LNA, implemented in 180 nm RFCMOS technology, is evaluated at 1 and 0.9 V supply voltages to show low voltage operation. It shows a maximum voltage gain of 19.7 dB with a minimum noise figure of 2.7 dB and a maximum 3‐dB bandwidth that spans from 300 MHz to 1.83 GHz. The minimum achieved IIP3 at 0.9 V supply voltage is −1.7 dBm. The circuit draws a maximum current of 10.36 mA from 1 V power supply and occupies an area of 0.08 mm².

中文翻译：

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具有降噪和三阶跨导优化功能的低功耗无电感宽带SFBB巴伦低噪声放大器

本文介绍了一种无电感器宽带巴伦低噪声放大器（LNA），它在低电源电压下使用了降噪和线性优化技术。所提出的自我正向体偏置LNA使用反相器型放大器结构作为阻抗匹配的输入级，而输出级是降噪级，从而部分抵消了输入级的噪声。除了降低噪声外，晶体管还被偏置到接近零的三阶跨导区域，以在低电源电压下最大化三阶输入参考截取点（IIP3）性能。采用180 nm RFCMOS技术实现的LNA在1和0.9 V的电源电压下进行了评估，以显示低电压工作状态。它显示出最大电压增益为19.7 dB，最小噪声系数为2.7 dB，最大3 dB带宽范围为300 MHz至1.83 GHz。在0.9 V电源电压下达到的最小IIP3为-1.7 dBm。该电路从1 V电源汲取的最大电流为10.36 mA，占用面积为0.08 mm²。