0.5 wt% boron-doped zinc oxide (BZO) films were fabricated by utilizing pulse laser deposition under different growth temperature ranged from 250 °C to 450 °C. The effect of the growth temperature on the structural, optical, and electrical properties was investigated and discussed. The crystal structure and orientation of BZO thin films were examined by X-ray diffraction. All of the BZO films under various growth temperatures had strong c-axis (002)-preferred orientation. Optical transparency was high (>80%) over a wide spectral range from 400 nm to 700 nm, and the optical band gap value of BZO are found to be in the range from 3.18 to 3.47eV. According to the experimental data, the resistivity of the BZO film was optimized at ∼1.13 × 10⁻³ Ω-cm and significantly influenced by the growth temperature.

利用脉冲激光沉积在250°C至450°C的不同生长温度下制备了0.5 wt％的掺硼氧化锌（BZO）薄膜。研究和讨论了生长温度对结构，光学和电学性质的影响。通过X射线衍射检查了BZO薄膜的晶体结构和取向。在各种生长温度下，所有BZO膜均具有强的c轴（002）优先取向。在400nm至700nm的宽光谱范围内，光学透明性高（＞ 80％），并且发现BZO的光学带隙值在3.18至3.47eV的范围内。根据实验数据，将BZO膜的电阻率优化为〜1.13×10 ^-3 Ω-cm受生长温度的影响很大。