Abstract In recent days, Eco-friendly nano-composite thin film employed as an absorber layer in solar cells is one of the most worthy kind of industrial semiconductors and a variety of optoelectronics and optical device applications. Thus, nano-composite samples of copper-zinc sulfide (Cu-Zn-S) embedded with silver dopants (Ag) were perfectly synthesized using 280 °C temperature and low-cost sol-gel spin coating technique without sulfurization. For this objective, several films like pristine (S0) and Ag-doped Cu-Zn-S with different Ag concentrations 0.5% (S1), 1% (S2) and 2% (S3) were deposited on various kinds of substrates like glass, n-type and p-type silicon (Si) with 5 and 8 layer thicknesses. The impact of Ag concentration and the thickness of the prepared film on the surface morphology, structural, electrical, and optical properties of the deposited films on glass substrates were elaborated. It was found that both pristine and Cu-Zn-S films doped with various concentrations of Ag depict the polycrystalline structure of hexagonal and cubic crystal structure using X-ray diffraction. The images of the SEM (scanning electron microscopy) displayed excellent compatibility, homogeneous spreading with a smooth uniform surface, and cover all the areas of the substrates, especially the 1% Ag/Cu-Zn-S film with the structure of less porosity. The results of ICP-OES (inductively coupled plasma-optical emission spectroscopy) and EDS (energy dispersive spectroscopy) were investigated to identify the composition of the forming elements. The optical properties of pristine and Ag-doped films with 5 and 8 layer thicknesses were reported. It was found that for 5 layer deposition at 280 °C, the optical bandgap energy (Eg) reduces from 2.29 eV (S0) to 2.09 eV at 2% Ag/Cu-Zn-S (S3) films. While for 8 layer deposition, the Eg decreases from 2.16 eV (S0) to 1.91 eV at 2% Ag/Cu-Zn-S (S3) films. Hence it can be concluded that the Eg decreases with increasing the thickness of the film, which is in agreement with the achieved results in the literature. In addition, it was observed that the 1% Ag/Cu-Zn-S (S2) film has the lowest resistivity value of 0.66 Ω cm at 280 °C. From all measurements obtained by depositing films on glass substrates, we select the best films to be deposited on n- and p-types Si substrates to study the impact of the n- and p-types silicon substrates on the properties of our films. We also calculated the values of the index of refraction (n), high frequency and optical static dielectric constants (e, e˳) of deposit films on Si and glass substrates through the calculation of Eg as a function of the silver concentrations.

中文翻译：

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银掺杂剂对溶胶-凝胶旋涂法制备的硫化铜锌薄膜结构、形态、光学和电学性能的影响

摘要 近年来，在太阳能电池中用作吸收层的环保纳米复合薄膜是最有价值的工业半导体和各种光电子和光学器件应用之一。因此，使用 280 °C 温度和低成本溶胶-凝胶旋涂技术完美合成了嵌入银掺杂剂 (Ag) 的铜-锌硫化物 (Cu-Zn-S) 纳米复合材料样品，无需硫化。为此，在玻璃等各种基材上沉积了几种薄膜，如原始 (S0) 和具有不同 Ag 浓度 0.5% (S1)、1% (S2) 和 2% (S3) 的 Ag 掺杂 Cu-Zn-S 、n 型和 p 型硅 (Si)，具有 5 层和 8 层厚度。Ag浓度和制备的薄膜厚度对表面形貌、结构、电学、并详细阐述了玻璃基板上沉积薄膜的光学特性。发现掺杂有不同浓度 Ag 的原始和 Cu-Zn-S 薄膜均使用 X 射线衍射描绘了六方和立方晶体结构的多晶结构。SEM（扫描电子显微镜）图像显示出良好的相容性，均匀铺展，表面光滑均匀，并覆盖了基材的所有区域，尤其是孔隙率较小的1% Ag/Cu-Zn-S薄膜。研究了 ICP-OES（电感耦合等离子体光发射光谱）和 EDS（能量色散光谱）的结果，以确定形成元素的组成。报道了具有 5 层和 8 层厚度的原始和掺银薄膜的光学特性。发现对于 280 °C 下的 5 层沉积，在 2% Ag/Cu-Zn-S (S3) 薄膜下，光学带隙能量 (Eg) 从 2.29 eV (S0) 降低到 2.09 eV。而对于 8 层沉积，2% Ag/Cu-Zn-S (S3) 薄膜的 Eg 从 2.16 eV (S0) 降低到 1.91 eV。因此可以得出结论，Eg随着薄膜厚度的增加而降低，这与文献中取得的结果一致。此外，观察到 1% Ag/Cu-Zn-S (S2) 薄膜在 280 °C 时具有 0.66 Ω cm 的最低电阻率值。从在玻璃基板上沉积薄膜获得的所有测量结果中，我们选择最好的薄膜沉积在 n 型和 p 型硅基板上，以研究 n 型和 p 型硅基板对我们薄膜性能的影响。我们还计算了折射率 (n) 的值，