Abstract Studies on organic scintillation single crystal 1,1,4,4-Tetraphenyl-1,3-Butadiene (TPB) grown by vertical Bridgman technique for the first time is reported. Structural analysis was carried out with Single crystal and Powder X-ray diffractometer which is confirmed the cell parameters of the grown crystal. A definite vibrational analysis was identified on the fundamental modes of vibration. The refractive index of 1.618 was recorded by Abbe refractometer. UV–Vis near IR spectrum was used to determine the absorption edge and found to be 419 nm. The bandgap energy of the crystal was found to be 2.89 eV. Fluorescence spectra of the crystal exhibit a broad emission band at 440 nm. The fluorescence lifetime of TPB measured by TCSPC method reveals a short decay time of 16 ns for prompt and 40 ns for delayed. Photoconductivity of TPB exhibits the positive photoconductivity nature. The Vickers microhardness were used to determine the hardness number (Hυ) and Meyers index of the grown crystal. Essential Mechanical properties such as stiffness constant and yield strength were calculated. Chemical etching was carried out to study the defects and growth mechanism involved in the grown crystal and the etching characteristics of the crystal surface enunciate the 2-dimensional layer growth.

中文翻译：

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使用垂直布里奇曼技术生长和表征有机闪烁单晶 1,1,4,4-四苯基-1,3-丁二烯 (TPB)

摘要 首次报道了垂直布里奇曼技术生长的有机闪烁单晶1,1,4,4-四苯基-1,3-丁二烯(TPB)。用单晶和粉末X射线衍射仪进行结构分析，确认生长晶体的晶胞参数。对振动的基本模式进行了明确的振动分析。阿贝折射计记录的折射率为 1.618。紫外-可见近红外光谱用于确定吸收边，发现为 419 nm。发现晶体的带隙能量为 2.89 eV。该晶体的荧光光谱在 440 nm 处显示出宽发射带。通过 TCSPC 方法测量的 TPB 的荧光寿命显示，瞬时衰减时间为 16 ns，延迟为 40 ns。TPB 的光电导性表现出正光电导性质。维氏显微硬度用于确定生长晶体的硬度值 (Hυ) 和迈耶斯指数。计算了基本的机械性能，例如刚度常数和屈服强度。进行化学蚀刻以研究生长晶体中涉及的缺陷和生长机制，晶体表面的蚀刻特性阐明了二维层生长。