Abstract Low frequency photocurrent noise, as well as the forward current noise are studied for the first time in mid-infrared InAsSbP/InAs double heterostructure photodiodes at 100 K. Two types of photodiodes are identified. For the first type, the spectral noise density, SI, depends on frequency as 1/f’. For the second type, generation-recombination (GR) noise component dominates. Our results show that in those samples, it is one and the same local center that is responsible for the noise over the entire photocurrent range. The forward current noise in all samples is lower than that previously observed in InAsSbP/InAs single heterostructure photodiodes at 77 K. In samples demonstrating 1/f’ noise, the spectral noise density, SI, is proportional to the square of the current. In samples with GR noise, we also observe SI ∼ I2 dependences in a certain current range. At higher currents, the noise decreases or tends to saturate. We show that at 100K, the Nyquist noise is dominant and can be used for estimating the specific detectivity at photocurrents Iph ≤5·10-9 A for samples showing 1/f’ noise, and at Iph ≤2·10-9 A for samples presenting GR noise component. At higher Iph the photocurrent noise should be also taken into account.

中文翻译：

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双异质结构 P-InAsSbP/n-InAs 中红外光电二极管在低温下的低频噪声：光伏模式和正向偏置

摘要 首次研究了中红外 InAsSbP/InAs 双异质结构光电二极管在 100 K 下的低频光电流噪声以及正向电流噪声。确定了两种类型的光电二极管。对于第一种类型，频谱噪声密度 SI 取决于频率为 1/f'。对于第二种类型，生成重组 (GR) 噪声分量占主导地位。我们的结果表明，在这些样本中，在整个光电流范围内产生噪声的是同一个局部中心。所有样品中的正向电流噪声低于之前在 77 K 时在 InAsSbP/InAs 单异质结构光电二极管中观察到的噪声。在展示 1/f' 噪声的样品中，光谱噪声密度 SI 与电流的平方成正比。在具有 GR 噪声的样本中，我们还观察到特定电流范围内的 SI ∼ I2 依赖性。在更高的电流下，噪声会降低或趋于饱和。我们表明，在 100K 时，奈奎斯特噪声占主导地位，可用于估计光电流 Iph ≤5·10-9 A 时显示 1/f' 噪声的样品的比检测率，以及 Iph ≤2·10-9 A 时的比检测率呈现 GR 噪声分量的样本。在 Iph 较高时，还应考虑光电流噪声。