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Exciton-phonon coupling and power dependent room temperature photoluminescence of sulphur vacancy doped MoS2via controlled thermal annealing.
Nanoscale ( IF 5.8 ) Pub Date : 2020-08-17 , DOI: 10.1039/d0nr05229a Dario Mastrippolito 1 , Stefano Palleschi , Gianluca D'Olimpio , Antonio Politano , Michele Nardone , Paola Benassi , Luca Ottaviano
Nanoscale ( IF 5.8 ) Pub Date : 2020-08-17 , DOI: 10.1039/d0nr05229a Dario Mastrippolito 1 , Stefano Palleschi , Gianluca D'Olimpio , Antonio Politano , Michele Nardone , Paola Benassi , Luca Ottaviano
Affiliation
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Via experiments performed by varying the doping level of single-layer mechanically exfoliated MoS2via post exfoliation thermal annealing in the 200–300 °C temperature range, we study the power dependent room temperature (RT) photoluminescence (PL), which is dominated by A type excitons. The PL spectral yields of the as-exfoliated and annealed samples show sub-linear behaviour as a function of the excitation laser power. The PL signal of the 200 °C annealed sample is dominated by the charged exciton (trion) related peak, while the PL signal of the 300 °C annealed sample is dominated by the neutral exciton related peak, and the PL spectral weight of excitons is tunable in this temperature range. The PL signal increase due to annealing and the intensity ratio of the A type excitons are related, showing a hyperbolic tangent trend. We directly quantitatively demonstrate the one-to-one correlation of the RT resonant Raman (632.8 nm) integrated spectral intensity with the corresponding PL spectral yield, providing experimental evidence of the exciton–phonon coupling effect. The in-plane E2g1 Raman mode exhibits strong coupling with A excitons, while the out-of-plane A1g Raman mode does not. This is an indication of the in-plane spatial symmetry of the A excitons.
中文翻译：
通过控制热退火，硫空位掺杂的MoS2的激子-声子耦合和随功率变化的室温光致发光。
经由实验通过改变单层的掺杂水平机械剥离的MoS进行2经由剥落后在200–300°C的温度范围内进行热退火，我们研究了与功率有关的室温（RT）光致发光（PL），其中A型激子占主导地位。剥落和退火后的样品的PL光谱屈服表明亚线性行为是激发激光功率的函数。200°C退火样品的PL信号以带电激子（trion）相关峰为主，而300°C退火样品的PL信号以中性激子相关峰为主，激子的PL谱重为在此温度范围内可调。由于退火引起的PL信号增加与A型激子的强度比有关，呈双曲线正切趋势。我们直接定量地证明了RT共振拉曼（632。8 nm）的光谱强度与相应的PL光谱产率集成在一起，提供了激子-声子耦合效应的实验证据。面内E2g 1拉曼模式显示出与A激子的强耦合，而面外A 1g拉曼模式则没有。这表明了激子的平面内空间对称性。
更新日期：2020-09-24
中文翻译：
通过控制热退火，硫空位掺杂的MoS2的激子-声子耦合和随功率变化的室温光致发光。
经由实验通过改变单层的掺杂水平机械剥离的MoS进行2经由剥落后在200–300°C的温度范围内进行热退火，我们研究了与功率有关的室温（RT）光致发光（PL），其中A型激子占主导地位。剥落和退火后的样品的PL光谱屈服表明亚线性行为是激发激光功率的函数。200°C退火样品的PL信号以带电激子（trion）相关峰为主，而300°C退火样品的PL信号以中性激子相关峰为主，激子的PL谱重为在此温度范围内可调。由于退火引起的PL信号增加与A型激子的强度比有关，呈双曲线正切趋势。我们直接定量地证明了RT共振拉曼（632。8 nm）的光谱强度与相应的PL光谱产率集成在一起，提供了激子-声子耦合效应的实验证据。面内E2g 1拉曼模式显示出与A激子的强耦合，而面外A 1g拉曼模式则没有。这表明了激子的平面内空间对称性。
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