Dilute bismide and nitride alloys are promising semiconductors for bandgap engineering, opening additional design freedom for devices such as infrared photodiodes. Low growth temperatures are required to incorporate bismuth or nitrogen into III–V semiconductors. However, the effects of low growth temperature on dark current and responsivity are not well understood. In this work, a set of InGaAs p-i-n wafers were grown at a constant temperature of 250, 300, 400 and 500 °C for all p, i and n layers. A second set of wafers was grown where the p and n layers were grown at 500 °C while the i-layers were grown at 250, 300 and 400 °C. Photodiodes were fabricated from all seven wafers. When constant growth temperature was employed (for all p, i and n layers), we observed that photodiodes grown at 500 °C show dark current density at −1 V that is six orders of magnitude lower while the responsivity at an illumination wavelength of 1520 nm is 4.5 times higher than those from photodiodes gr...

中文翻译：

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光电二极管应用中低温生长的InGaAs的电学和光学特性

稀铋化物和氮化物合金是用于带隙工程的有前途的半导体，为诸如红外光电二极管的设备提供了更多的设计自由度。将铋或氮掺入III-V半导体中需要较低的生长温度。但是，对于低生长温度对暗电流和响应度的影响还没有很好的理解。在这项工作中，在250、300、400和500℃的恒定温度下，对所有p，i和n层均生长了一组InGaAs针式晶圆。生长第二组晶片，其中p和n层在500°C下生长，而i层在250、300和400°C下生长。由所有七个晶片制成光电二极管。当采用恒定的生长温度时（对于所有p，i和n层），