In this paper, a novel β‐Ga₂O₃ high electron mobility transistor (BGO‐HEMT) with record‐high intrinsic unity current gain cut‐off frequency (f_T) of 166 GHz and RF output power (P_OUT) of 2.91 W/mm is demonstrated through 2D device simulations using an appropriate negative differential mobility model. The highly scaled proposed device uses 10 nm AlN barrier layer on 50 nm β‐Ga₂O₃ buffer with gate‐length (L_G) of 50 nm and aspect‐ratio (gate length to barrier thickness) of 5 ensures significant gain in high‐frequency performance. The novel device design offers very low access and dynamic resistance due to highly doped n⁺ access regions, and a finite gap between ohmic contacts and barrier layer to mitigate source choking effect. The device's superior DC and RF performance is well supported by large two‐dimensional electron gas (2DEG) density (n_s) of the order of 10¹³ cm⁻² due to large band discontinuity in AlN/β‐Ga₂O₃ heterostructure and highly polarized AlN material. The device shows maximum drain current density (I_DMAX) of ~11.5 A/mm and peak transconductance (g_m) of 0.917 S/mm at V_DS = 15 V and V_GS = 0 and − 7 V respectively. Furthermore, the term 2π (f_T × L_G) for the device shows a value of 0.5 × 10⁷ cm/s, very close to v_sat of 1.5 × 10⁷ cm/s in β‐Ga₂O₃. These promising results enhance the potential of β‐Ga₂O₃ for future high power RF and microwave applications.

中文翻译：

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新颖的β-Ga2O3HEMT，fT为166 GHz，X波段POUT为2.91 W / mm

本文提出了一种新型的β- Ga ₂ O ₃高电子迁移率晶体管（BGO-HEMT），其创纪录的固有单位电流截止频率（f _T）为166 GHz，射频输出功率（P _OUT）为2.91 W / mm通过使用适当的负微分迁移率模型的2D设备仿真进行演示。高度缩放提出的装置上50纳米使用10纳米的AlN阻挡层β -Ga ₂ ö ₃与栅极长度的缓冲区（大号_ģ）为50 nm，纵横比（栅极长度与势垒厚度）为5确保了高频性能的显着提高。由于高度掺杂的n ⁺访问区域，新颖的器件设计提供了非常低的访问和动态电阻，并且在欧姆接触和势垒层之间形成了有限的间隙以减轻源极扼流效应。由于AlN / β‐ Ga ₂ O ₃异质结构中的带不连续性大，且二维电子气（2DEG）密度（n _s）约为10 ¹³  cm ^-2，很好地支持了该器件的出色DC和RF性能。高极化AlN材料。器件显示最大漏极电流密度（在V _DS = 15 V和V _GS = 0和− 7 V时，I _DMAX）约为11.5 A / mm，峰值跨导（g _m）为0.917 S / mm 。此外，器件的2π（f _T  ×  L _G）项的值为0.5×10 ⁷  cm / s，非常接近于β- Ga ₂ O _3中的v _sat的1.5×10 ⁷  cm / s 。这些有希望的结果增强了β‐ Ga ₂ O ₃在未来大功率射频和微波应用中的潜力。