Abstract Based on own previous studies on dislocation generation in FZ- silicon crystals and in order to verify the location and conditions of dislocation generation and spreading, in the current work we present results from a model experiment using a measurement set-up close to the FZ process. Here, an as-grown dislocation-free FZ crystal with a diameter of 20 mm was exposed to temperature-induced strains. No mechanical surface treatment or sample preparation were applied and no mechanical stress was induced during measurement. The crystal was stepwise heated up in the temperature range from 700 °C till 1180 °C controlled by a pyrometric system. The crystal was cut into several samples and analyzed by Lateral Photovoltage Scanning (LPS), photoluminescence (PL) and etch pit density (EPD) as well as the lifetime (MDP) were measured. Our experimental results show that there is an indication that the dislocation density and the lifetime show an inverse behavior depending on the temperature increase in the investigated range. Therefore, this basic correlation known from the literature was confirmed. The area of dislocations generation and its spreading behavior could be revealed. Possible origins and correlations are discussed.

中文翻译：

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浮区法生长的硅晶体中的热刺激位错生成

摘要 基于我们之前对 FZ- 硅晶体中位错产生的研究，为了验证位错产生和扩散的位置和条件，在目前的工作中，我们展示了使用接近 FZ 的测量装置的模型实验结果。过程。在这里，一个直径为 20 毫米的生长的无位错 FZ 晶体暴露于温度诱导的应变。没有应用机械表面处理或样品制备，并且在测量过程中没有引起机械应力。晶体在 700 °C 至 1180 °C 的温度范围内逐步加热，由高温系统控制。将晶体切成几个样品并通过横向光电压扫描 (LPS)、光致发光 (PL) 和蚀刻坑密度 (EPD) 以及寿命 (MDP) 进行分析。我们的实验结果表明，有迹象表明位错密度和寿命表现出相反的行为，这取决于所研究范围内的温度升高。因此，证实了从文献中已知的这种基本相关性。可以揭示位错产生的区域及其扩散行为。讨论了可能的起源和相关性。