Abstract This work presents a novel methodology for the fabrication of planar diamond film NTC (Negative Temperature Coefficient) thermistors on sintered silicon nitride (Si3N4) ceramic substrates. Such devices comprise a temperature sensitive diamond coating on one of the substrate surfaces and tungsten carbide ohmic contacts on the opposite side. Hot filament chemical vapor deposition (HFCVD) technique was used for the fabrication of both temperature sensitive flat diamond surface and WC ohmic contacts. The doping source for the semiconducting diamond layers was boron oxide dispersed in ethanol, and was added to the hydrogen/methane gas mixture using argon gas. The fabrication of WC contacts was done by first evaporating the oxide layer of the tungsten filaments used for activating the gaseous species. Hydrogenation and carburization steps were then used to produce the carbide layer. Using this approach, NTC diamond thermistors were obtained and their electrical resistance dependence with temperature was plotted and fitted to the Steinhart-Hart equation, giving β values between 1200 and 2000 K, from room temperature up to 420 °C. The WC-diamond contacts ohmic character was confirmed within the same temperature range, which highlights the potential application of such devices in precise in situ temperature measurements, at high temperature and under mechanically tough environment conditions.

中文翻译：

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包含碳化钨欧姆接触的坚固负温度系数金刚石热敏电阻

摘要 这项工作提出了一种在烧结氮化硅 (Si3N4) 陶瓷基板上制造平面金刚石薄膜 NTC（负温度系数）热敏电阻的新方法。这种装置包括在基底表面之一上的温度敏感金刚石涂层和在相对侧上的碳化钨欧姆接触。热丝化学气相沉积 (HFCVD) 技术用于制造温度敏感的平面金刚石表面和 WC 欧姆接触。半导体金刚石层的掺杂源是分散在乙醇中的氧化硼，并使用氩气将其添加到氢气/甲烷气体混合物中。WC 触点的制造是通过首先蒸发用于激活气态物质的钨丝的氧化层来完成的。然后使用氢化和渗碳步骤来生产碳化物层。使用这种方法，获得了 NTC 金刚石热敏电阻，绘制了它们与温度的电阻依赖性并拟合到 Steinhart-Hart 方程，给出 β 值介于 1200 和 2000 K 之间，从室温到 420 °C。WC-金刚石触点的欧姆特性在相同温度范围内得到证实，这突出了此类器件在高温和机械恶劣环境条件下精确原位温度测量中的潜在应用。从室温到 420 °C。WC-金刚石触点的欧姆特性在相同温度范围内得到证实，这突出了此类器件在高温和机械恶劣环境条件下精确原位温度测量中的潜在应用。从室温到 420 °C。WC-金刚石触点的欧姆特性在相同温度范围内得到证实，这突出了此类器件在高温和机械恶劣环境条件下精确原位温度测量中的潜在应用。