We study the transmission spectrum and the band structure of a one-dimensional photonic crystal, made of alternating layers of SiO2 and TiO2 with a GaAs defect layer. The relative permittivity of the GaAs depends on the hydrostatic pressure and the temperature, while its thickness depends only on the pressure. The objective of this work is to apply an external pressure and temperature on the GaAs and study the behavior of the defect mode. The insertion of the GaAs layer inside the perfect structure creates defect mode in the gaps with higher quality factor and important transmission rate . The results show that our structure is sensitive to pressure and temperature variations of approximately P = 50 bar and Θ = 5°K, with a frequency shift of 0.05THz and 0.108THz, respectively. So, our proposed structure is a good candidate for the hydrostatic pressure and temperature sensor design.

中文翻译：

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基于缺陷一维光子晶体的高灵敏度静水压力和温度

我们研究了由 SiO2 和 TiO2 交替层与 GaAs 缺陷层组成的一维光子晶体的透射光谱和能带结构。GaAs 的相对介电常数取决于静水压力和温度，而其厚度仅取决于压力。这项工作的目的是在 GaAs 上施加外部压力和温度，并研究缺陷模式的行为。在完美结构中插入 GaAs 层会在具有更高品质因数和重要传输速率的间隙中产生缺陷模式。结果表明，我们的结构对大约 P = 50 bar 和 Θ = 5°K 的压力和温度变化敏感，频移分别为 0.05THz 和 0.108THz。所以，