Abstract The major objective of this manuscript is to develop an integrable capacitance-voltage (C-V) model for the extraction of the interfacial states at p-type polymeric semiconductor-insulator-metal (MIPS) capacitors. A polymeric P3HT (3-hexylthiophene) semiconductor-insulator-metal device was fabricated, firstly. Then, an integrable C-V model was developed. The model was based on Fermi-Dirac distribution for holes and experimental C-V of the p-type polymeric MIS. By the least square nonlinear curve fitting, good matches are presented between theoretical and experimental C-V plots for our p-type P3HT MIS capacitor. With nonlinear regression technique, the capacitance of polymeric MIS not only can be explained via voltage, but also can be predicted by frequency. Hence, the static C-V of polymeric MIS was successfully extracted and therefore the surface state density of polymeric MIS was evaluated via quasi-static technique. Because the suggested model is integrable, surface potential and the interfacial state density can be obtained with reliable, precise and simple method and over whole range of the energy gap on polymeric MIS in explicit functional form for the first time. The linear and non-linear electric potential were determined by applying integral of C-V model over whole voltage. The amount of the charge in channel region was determined by integrating model of C-V over all surface potential. This C-V model has been used to detect the charge on per unit area in channel too. Evidence is presented suggesting that more electrical information of polymeric MIS can be obtained via analysis on C-V characteristics using the suggested model.

中文翻译：

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可靠而精确地确定金属-绝缘体-聚合物半导体器件中的界面态

摘要 本手稿的主要目的是开发一种可积分的电容电压 (CV) 模型，用于提取 p 型聚合物半导体-绝缘体-金属 (MIPS) 电容器的界面状态。首先制备了聚合物 P3HT（3-己基噻吩）半导体-绝缘体-金属器件。然后，开发了可积的 CV 模型。该模型基于空穴的费米-狄拉克分布和 p 型聚合物 MIS 的实验 CV。通过最小二乘非线性曲线拟合，我们的 p 型 P3HT MIS 电容器的理论和实验 CV 图之间呈现出良好的匹配。使用非线性回归技术，聚合物MIS的电容不仅可以用电压来解释，还可以用频率来预测。因此，成功提取了聚合物 MIS 的静态 CV，因此通过准静态技术评估了聚合物 MIS 的表面态密度。由于所提出的模型是可积的，因此首次可以通过可靠、精确和简单的方法，在显式函数形式的聚合物MIS上的整个能隙范围内获得表面势和界面态密度。通过在整个电压上应用 CV 模型的积分来确定线性和非线性电势。通道区的电荷量是通过对所有表面电位的 CV 积分模型确定的。该 CV 模型也被用于检测通道中单位面积的电荷。