Abstract Over the last decades, great advances have been made in the development of nanoscale optoelectronics, such as solar cells, photodetectors, and light-emitting diodes. The design of heterojunctions with highly desirable interface properties and consequently controllable carrier transfer is of vital importance to construct high-performance optoelectronic devices. The type-II nano-heterojunctions, which facilitates the spatial separation of the electrons and holes, hold particular interests in developing high-performance optoelectronics. This review presents an overview of the material and structural design strategies, such as precise tuning of chemical composition and crystal structure, interface strain engineering, structural optimization, and external field stimulates, with the emphasis on the photophysical properties of type-II heterojunctions. Additionally, synthetic strategies for efficient material and structural modulation are also summarized. Lastly, several emergent optoelectronic applications based on the type-II heterojunctions, such as photonic memory, photonic synapses, and optical communication are discussed. We hope this review can provide comprehensive guidance for the future development of designing and realizing high-performance nanoscale optoelectronic devices based on type-II heterojunctions.

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纳米光电子学 II 型纳米异质结的合理设计

摘要 在过去的几十年里，纳米级光电子学的发展取得了长足的进步，例如太阳能电池、光电探测器和发光二极管。具有非常理想的界面特性和可控的载流子转移的异质结的设计对于构建高性能光电器件至关重要。II型纳米异质结有助于电子和空穴的空间分离，在开发高性能光电子学方面具有特别的兴趣。本综述概述了材料和结构设计策略，例如化学成分和晶体结构的精确调整、界面应变工程、结构优化和外部场刺激，重点是 II 型异质结的光物理特性。此外，还总结了有效材料和结构调制的合成策略。最后，讨论了几种基于 II 型异质结的新兴光电应用，如光子存储器、光子突触和光通信。我们希望这篇综述能够为设计和实现基于 II 型异质结的高性能纳米级光电器件的未来发展提供全面的指导。