The robustness of Static random access memory (SRAM) Physical unclonable functions (PUFs) is threatened by the state change of the power-up value (R) at different temperatures. The voltage ramp-up time T_ramp is one of the factors that can affect the stability of R. Some studies have been performed on the T_ramp of commercial SRAM chips at the microsecond (μs) level. In this paper, a robust and low cost SRAM PUF using a p-channel metal oxide semiconductor (PMOS) as a power switch to enhance the stability of R is proposed. T_ramp is as fast as 11 V/ns. The proposed SRAM PUF has a linear shift register extractor, with an extraction rate as high as 7/18 and no helper data in contrast to traditional von Neumann extractor. This chip has been fabricated using 0.11 μm ultra-low-leakage technology. The experiment results show that R becomes stable at [-40 °C, 85 °C], and a simple lightweight error correcting codes (ECC) can be used in SRAM PUF.

静态随机存取存储器（SRAM）的健壮性物理不可克隆功能（PUF ）在不同温度下会受到上电值（R）的状态变化的威胁。电压上升时间T _ramp是可以影响R稳定性的因素之一。已经对商业SRAM芯片的T_斜坡以微秒（μs）的水平进行了一些研究。本文提出了一种坚固耐用且低成本的SRAM PUF，该晶体管PUF使用p沟道金属氧化物半导体（PMOS）作为电源开关来增强R的稳定性。T_坡道高达11 V / ns。所提出的SRAM PUF具有线性移位寄存器提取器，与传统的冯·诺依曼提取器相比，提取率高达7/18，并且没有辅助数据。该芯片采用0.11μm超低泄漏技术制造。实验结果表明，R在[-40°C，85°C]下变得稳定，并且可以在SRAM PUF中使用简单的轻量级纠错码（ECC）。