Abstract Organic-inorganic halide perovskite materials have been demonstrated with wide applications in optoelectronics and ionization radiation detection. For bulk as-grown crystals, the existence of surface cracks and defects can significantly increase charges recombination and reduce the performance of the device. Herein, we polished the crystal surfaces with both mechanical and chemical mechanical methods at room temperature. After been chemical-mechanical polished, the crystal surface with root mean square roughness about 0.5 nm was obtained. Optical transmission and photoluminescence spectra indicate that chemical mechanical polishing technology can effectively reduce the density of crystal surface defects. The achieved low leakage current density on the surface and bulk crystal is 0.05 nA mm−2 and 0.07 nA mm−2, respectively. Furthermore, the current-voltage curve under visible photons and X-ray photons reveals that surface polishing treatment can suppress the charges recombination and increase the charges transportation.

中文翻译：

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块状甲基铵三溴化铅单晶的表面抛光

摘要 有机-无机卤化物钙钛矿材料已被证明在光电子学和电离辐射检测中具有广泛的应用。对于块状生长晶体，表面裂纹和缺陷的存在会显着增加电荷复合并降低器件的性能。在这里，我们在室温下用机械和化学机械方法抛光晶体表面。经化学机械抛光后，得到均方根粗糙度约0.5nm的晶体表面。光透射和光致发光光谱表明化学机械抛光技术可以有效降低晶体表面缺陷的密度。在表面和块状晶体上实现的低漏电流密度分别为 0.05 nA mm-2 和 0.07 nA mm-2。此外，