Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity,Chemistry of Materials

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Area-Selective Atomic Layer Deposition of TiN Using Aromatic Inhibitor Molecules for Metal/Dielectric Selectivity
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-08-13 , DOI: 10.1021/acs.chemmater.0c02370
Marc J. M. Merkx ₁ , Sander Vlaanderen ₁ , Tahsin Faraz ₁ , Marcel A. Verheijen _{1,

2} , Wilhelmus M. M. Kessels ₁ , Adriaan J. M. Mackus ₁

Affiliation

Despite the rapid increase in the number of newly developed processes, area-selective atomic layer deposition (ALD) of nitrides is largely unexplored. ALD of nitrides at low temperature is typically achieved by employing a plasma as the coreactant, which is not compatible with most approaches to area-selective ALD. In this work, a plasma-assisted ALD process for area-selective deposition of TiN was developed, which involves dosing of inhibitor molecules at the start of every ALD cycle. Aromatic molecules were identified as suitable inhibitor molecules for metal/dielectric selectivity because of their strong and selective adsorption on transition metal surfaces. A four-step (i.e., ABCD-type) ALD cycle was developed, which comprises aniline inhibitor (step A) and tetrakis(dimethylamino)titanium precursor (step B) dosing steps, followed by an Ar–H₂ plasma exposure (step C), during which a substrate bias is applied in the second half of the plasma exposure (step D). This process was demonstrated to allow for ∼6 nm of selective TiN deposition on SiO₂ and Al₂O₃ areas of a nanoscale pattern with Co and Ru non-growth areas. The TiN deposited using this ABCD-type process is of high quality in terms of resistivity (230 ± 30 μΩ cm) and impurity levels. This developed strategy for area-selective ALD of TiN can likely be extended to area-selective ALD of other nitrides.

中文翻译：

利用芳香族抑制剂分子对TiN进行区域选择性原子层沉积，以实现金属/介电选择性

尽管新开发的工艺数量迅速增加，但氮化物的区域选择性原子层沉积（ALD）仍在很大程度上未被探索。氮化物在低温下的ALD通常通过使用等离子体作为共反应剂来实现，这与大多数区域选择性ALD方法都不兼容。在这项工作中，开发了用于TiN区域选择性沉积的等离子体辅助ALD工艺，该工艺涉及在每个ALD循环开始时给抑制剂分子加药。芳香族分子因其在过渡金属表面上的强而选择性的吸附而被确定为对金属/介电选择性合适的抑制剂分子。开发了一个四步（即ABCD型）ALD循环，该循环包括苯胺抑制剂（步骤A）和四（二甲基氨基）钛前体（步骤B）的加料步骤，然后是Ar–H_在图2的等离子体曝光（步骤C）中，在等离子体曝光的后半部分中施加衬底偏压（步骤D）。事实证明，该工艺可以在具有Co和Ru非生长区域的纳米级图案的SiO ₂和Al ₂ O ₃区域上进行约6 nm的选择性TiN沉积。使用ABCD型工艺沉积的TiN在电阻率（230±30μΩcm）和杂质水平方面具有很高的质量。这种针对TiN的区域选择性ALD的开发策略可能会扩展到其他氮化物的区域选择性ALD。

更新日期：2020-09-22

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