Tailoring the elemental doping of inorganic nanowires remains an important challenge due to complex dopant incorporation pathways. Here we report that the face-selectivity of tungstate ions controls growth direction and dopant incorporation of hydrothermal zinc oxide nanowires. The introduction of tungstate ions on nanowire surface during synthesis unexpectedly enhances nucleation at sidewall \(\left\{ {10\bar 10} \right\}\) planes, while dopant incorporation occurs only on (0001) planes. This conflicting face-selective behavior leads to inhomogeneous dopant distribution. Density functional theory calculations reveal that the face-selective behavior can be interpreted in terms of the effect of coordination structure of the tungstate ions on each zinc oxide crystal plane. In addition, we demonstrate a rational strategy to control the morphology and the elemental doping of tungsten-doped zinc oxide nanowires.

由于复杂的掺杂剂掺入途径，定制无机纳米线的元素掺杂仍然是重要的挑战。在这里我们报告钨酸离子的面选择性控制水热氧化锌纳米线的生长方向和掺杂剂的结合。在合成过程中，钨丝离子在纳米线表面的引入意外地增强了侧壁\（\ left \ {{10 \ bar 10} \ right \} \）的成核作用掺杂剂掺入仅发生在（0001）面上。这种相互矛盾的面部选择行为导致掺杂剂分布不均匀。密度泛函理论计算表明，可以根据钨酸根离子在每个氧化锌晶体平面上的配位结构的影响来解释面选择行为。另外，我们证明了控制钨掺杂的氧化锌纳米线的形态和元素掺杂的合理策略。