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Localized spin‐flip excitations in hexagonal HoMnO3
Journal of Raman Spectroscopy ( IF 2.4 ) Pub Date : 2020-08-13 , DOI: 10.1002/jrs.5969
Ji‐Yeon Nam 1 , Seung Kim 1 , Hien Thi Minh Nguyen 2 , Xiang‐Bai Chen 3 , Mahn‐Soo Choi 4 , Daesu Lee 5, 6, 7 , T.W. Noh 5, 6 , In‐Sang Yang 1
Affiliation  

Growing demands for ultra‐fast switching of spins have turned attention to optically controlled spintronics, which indeed has recently been demonstrated promising. Here we report localized spin‐flip excitations revealed by resonance inelastic light scattering on hexagonal holmium manganite thin films with the magnetic manganese ions substituted by the nonmagnetic gallium ions (HoMn1 − xGaxO3). Our analyses on a broad Raman peak support that the corresponding spin excitation is associated with flipping of all three Mn3+ spins in the elementary trimer of manganese ions and hence maintains the same excitation energy determined by the intrinsic spin–spin interaction between Mn3+ ions. The nonmagnetic gallium ions only reduce the population of the spin excitations by breaking the spin‐frustrated triangular network. Such localized spin‐flip excitations show another promise towards optically controlled spin devices.

中文翻译:

六角形HoMnO3中的局部自旋翻转激发

对自旋超快速切换的日益增长的需求已引起人们对光学控制自旋电子器件的关注,最近已证明确实有希望。在这里,我们报告了在六角锰矿薄膜上的共振非弹性光散射所揭示的局部自旋翻转激发,其中六价锰磁石被非磁性镓离子(HoMn 1- x Ga x O 3)取代。我们对一个宽拉曼峰的分析支持,相应的自旋激发与锰离子基本三聚体中所有三个Mn 3+自旋的翻转相关,因此保持相同的激发能,该激发能由Mn 3+之间的固有自旋-自旋相互作用确定离子。非磁性镓离子只能通过破坏自旋受阻的三角网络来减少自旋激发的数量。这种局部自旋翻转激发显示出对光控自旋装置的另一种希望。
更新日期:2020-08-13
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